MIG50J101H TOSHIBA Semiconductor CORPORATION, MIG50J101H Datasheet
MIG50J101H
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MIG50J101H Summary of contents
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... Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : V CE (sat 3.0 µs (max) off t = 0.30 µs (max Package dimensions : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit MIG50J101H = 2.5 V (max) 1 MIG50J101H 2002-10-31 ...
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... M5 = 25°C) Symbol Test Condition T = 25° 600V CEX 125° 25° (sat 125° 50A 300 < off D IN Inductive load MIG50J101H Symbol Ratings Unit V 450 600 V CES 150 150 ° í20 ~ +100 °C T í40 ~ +125 °C stg V 2500 V ISO 3 Nm Š ...
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... ( (on (off Š 125° 125° Case temperature OTr UV Š UVr MIG50J101H Min Typ. Max Unit 8 Š Š Š Š 1.3 1.5 1.7 V 2.2 2.5 2 Š Š 75 100 A Š 110 150 A Š 5 µs Š Š 110 118 125 °C 98 Š ...
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... Test Condition Inverter IGBT stage th (j-c) Inverter FRD stage Compound is applied th (c-f) Intelligent power module GND GND 4 MIG50J101H Min Typ. Max Unit 0.833 Š Š ° 2.000 Š Š 0.05 ° Š Š P OUT V S GND (V, W) OUT GND ...
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... MIG50J101H 2002-10-31 ...
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... MIG50J101H 2002-10-31 ...
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... Package Dimensions: TOSHIBA 2-110A1A 7 MIG50J101H Unit: mm 2002-10-31 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 MIG50J101H 000707EAA 2002-10-31 ...