UPA672T NEC, UPA672T Datasheet
UPA672T
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UPA672T Summary of contents
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... Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature Document No. G11259EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET ARRAY FOR SWITCHING PACKAGE DIMENSIONS (in millimeters) PIN CONNECTION ˚C) A SYMBOL TEST CONDITIONS V DSS V GSS I ...
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ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R DS(on)2 ...
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TYPICAL CHARACTERISTICS (T TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 250 200 150 100 100 T - Ambient Temperature - ˚C A TRANSFER CHARACTERISTICS 100 ˚C ...
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DRAIN TO SOURCE ON-STAGE RESISTANCE vs. GATE TO SOURCE VOLTAGE Gate to Source Voltage - V GS SWITCHING CHARACTERISTICS 100 t ...
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... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide PA672T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
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... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...