UPA803T NEC, UPA803T Datasheet

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UPA803T

Manufacturer Part Number
UPA803T
Description
6-pin small MM high-frequency double transistor
Manufacturer
NEC
Datasheet
Document No. ID-3637
Date Published April 1995 P
Printed in Japan
(O.D. No. ID-9144)
FEATURES
• High f
• Small Collector Capacitance
• A Surface Mounting Package Adopted
• Built-in 2 Transistors (2
ORDERING INFORMATION
Remark If you require an evaluation sample, please contact an NEC
ABSOLUTE MAXIMUM RATINGS (T
Note 90 mW must not be exceeded in 1 element.
PART NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
f
C
PA803T-T1
T
PA803T has built-in 2 transistors which were developed for UHF.
PA803T
ob
= 5.5 GHz TYP. (@V
= 0.7 pF TYP. (@V
PARAMETER
T
Sales Representative. (Unit sample quantity is 50 pcs.)
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
QUANTITY
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
CE
CB
The information in this document is subject to change without notice.
NPN SILICON EPITAXIAL TRANSISTOR
PRELIMINARY DATA SHEET
= 5 V, I
= 5 V, I
2SC4570)
SYMBOL
V
V
V
T
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
P
T
CBO
CEO
EBO
I
stg
C
T
j
C
E
= 0, f = 1 MHz)
= 5 mA, f = 1 GHz)
A
120 in 1 element
160 in 2 elements
= 25 C)
PACKING STYLE
–55 to +125
RATING
125
20
12
30
3
Note
UNIT
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PIN CONFIGURATION (Top View)
PACKAGE DRAWINGS
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PA803T
Q
6
1
1
1.25±0.1
2.1±0.1
5
2
©
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
(Unit: mm)
4
Q
3
2
1995

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UPA803T Summary of contents

Page 1

... PART NUMBER QUANTITY PA803T Loose products (50 PCS) PA803T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current ...

Page 2

... FE Gain Bandwidth Product f T Feed-back Capacitance Insertion Power Gain | Ratio FE1 FE2 Notes 1. Pulse Measurement Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. h CLASSIFICATION FE Rank FB Marking T73 h Value 60 to 120 100 to 200 FE TYPICAL CHARACTERISTICS ( Characteristics T A 160 mW ...

Page 3

Characteristics 160 A B 140 A 20 120 A 100 Collector to Emitter Voltage V (V) ...

Page 4

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.00 .887 –16.9 200.00 .781 –34.4 300.00 .663 –49.9 400.00 .555 –63.2 500.00 .456 –74.9 600.00 .388 –83.6 700.00 .328 ...

Page 5

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.00 .974 –8.7 200.00 .957 –18.0 300.00 .922 –27.1 400.00 .882 –35.5 500.00 .837 –44.3 600.00 .793 –52.1 700.00 .741 ...

Page 6

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.00 .920 –14.3 200.00 .860 –28.2 300.00 .774 –41.7 400.00 .689 –54.1 500.00 .600 –66.2 600.00 .530 –75.7 700.00 .456 ...

Page 7

PA803T 7 ...

Page 8

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...

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