MC14000UB Motorola, MC14000UB Datasheet

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MC14000UB

Manufacturer Part Number
MC14000UB
Description
General Purpose Transistors NPN and PNP Silicon
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN and PNP Silicon
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
Thermal Clad is a trademark of the Bergquist Company.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous MMBT3904WT1
Total Device Dissipation (1)
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
Collector – Emitter Breakdown Voltage (2)
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
These transistors are designed for general purpose amplifier applications. They are
Motorola, Inc. 1996
T A = 25 C
(I C = 1.0 mAdc, I B = 0)
(I C = –1.0 mAdc, I B = 0)
(I C = 10
(I C = –10
(I E = 10
(I E = –10
(V CE = 30 Vdc, V EB = 3.0 Vdc)
(V CE = –30 Vdc, V EB = –3.0 Vdc)
(V CE = 30 Vdc, V EB = 3.0 Vdc)
(V CE = –30 Vdc, V EB = –3.0 Vdc)
m
m
Adc, I E = 0)
Adc, I C = 0)
m
m
Adc, I E = 0)
Adc, I C = 0)
Characteristic
Rating
v
300
m
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3906WT1
s; Duty Cycle
Characteristic
(T A = 25 C unless otherwise noted)
v
2.0%.
Symbol
Symbol
T J , T stg
V CEO
V CBO
V EBO
R
P D
I C
q
JA
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
– 55 to +150
Value
–200
–5.0
Max
–40
–40
200
150
833
6.0
40
60
mAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
C/W
C
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
I CEX
I BL
MMBT3904WT1
MMBT3906WT1
AMPLIFIER TRANSISTORS
GENERAL PURPOSE
CASE 419–02, STYLE 3
–5.0
Min
–40
–40
SURFACE MOUNT
6.0
40
60
SOT–323/SC–70
1
NPN
PNP
Order this document
2
Max
–50
–50
50
50
MMBT3904WT1/D
3
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
1

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MC14000UB Summary of contents

Page 1

... Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint Pulse Test: Pulse Width 300 s; Duty Cycle Thermal Clad is a trademark of the Bergquist Company. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 Symbol Value Unit V CEO 40 Vdc – ...

Page 2

... MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 h oe MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Min Max Unit — 40 — 70 — 100 300 60 — 30 — 60 — 80 — 100 ...

Page 3

... C ibo 3.0 C obo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3904WT1 + < < 500 s DUTY CYCLE = 2% 275 < 4 pF* – ...

Page 4

... NOISE FIGURE VARIATIONS 1.0 kHz 0 MMBT3904WT1 100 0.1 0.2 0.4 Motorola Small–Signal Transistors, FETs and Diodes Device Data 5.0 7 100 200 COLLECTOR CURRENT (mA) Figure 6. Rise Time 100 200 5.0 7 COLLECTOR CURRENT (mA) Figure 8. Fall Time ...

Page 5

... Figure 11. Current Gain 20 10 MMBT3904WT1 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2 COLLECTOR CURRENT (mA) Figure 13. Input Impedance Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3904WT1 h PARAMETERS ( Vdc 1.0 kHz 100 3.0 5.0 10 0.1 0.2 Figure 12 ...

Page 6

... Figure 16. Collector Saturation Region 1.0 MMBT3904WT1 0 =1.0 V – 0.5 – 1 FOR V BE(sat) – 1.5 – 2.0 50 100 200 0 20 Figure 18. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 V MMBT3904WT1 100 200 MMBT3904WT1 100 mA 2.0 3.0 5.0 7 +125 C ...

Page 7

... 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) Figure 23. Turn – On Time Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3906WT1 9.1 V 275 < < < 500 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 20. Storage and Fall Time ...

Page 8

... Figure 30. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 0 100 A MMBT3906WT1 0.4 1.0 2.0 4 SOURCE RESISTANCE (k ) Figure 26. MMBT3906WT1 0.3 ...

Page 9

... MMBT3906WT1 0.4 0.2 V CE(sat 1.0 2.0 5 COLLECTOR CURRENT (mA) Figure 33. “ON” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3906WT1 STATIC CHARACTERISTICS +125 C +25 C – 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) Figure 31. DC Current Gain ...

Page 10

... Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data ...

Page 11

... 0.05 (0.002) H Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MMBT3904WT1 PNP MMBT3906WT1 PACKAGE DIMENSIONS CASE 419–02 ISSUE G SOT–323/SC–70 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN ...

Page 12

... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “ ...

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