MWS5114E2 Intersil Corporation, MWS5114E2 Datasheet
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MWS5114E2
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MWS5114E2 Summary of contents
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... Min • All Inputs and Outputs Directly TTL Compatible • Three-State Outputs • Low Standby and Operating Power Ordering Information 200ns 250ns MWS5114E3 MWS5114E2 MWS5114E2X MWS5114D3 MWS5114D2 MWS5114D3X Pinout FUNCTION Read Write Not Selected CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...
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Functional Block Diagram I/O 1 I/O 2 I MWS5114 MEMORY ARRAY ROW 64 ROWS SELECT 64 COLUMNS COLUMN I/O CIRCUITS INPUT COLUMN SELECT ...
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Absolute Maximum Ratings DC Supply Voltage Range (All Voltages Referenced to V Terminal -0.5V to +7V SS Input Voltage Range, All Inputs . . . . . . . ...
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Static Electrical Specifications CONDITIONS PARAMETER SYMBOL (V) (V) Three-State OUT Output Leakage Current (Note 4) Input Capacitance Output OUT Capacitance NOTES Typical ...
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Dynamic Electrical Specifications (NOTE 1) PARAMETER SYMBOL MIN READ CYCLE TIMES (FIGURE 1) Read Cycle tRC 200 Access from tAA - Address Chip Selection to tCO - Output Valid Chip Selection to tCX 20 Output Active Output Three-State tOTD - ...
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ADDRESS CS D OUT NOTE high during the Read Cycle. Timing measurement reference level is 1.5V. ADDRESS NOTE low during the Write Cycle. Timing measurement reference level is 1.5V. Data Retention ...
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... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...