MAX13330GEE/V+T Maxim Integrated Products, MAX13330GEE/V+T Datasheet - Page 2

IC AMP STEREO HEADPHONE 16-QSOP

MAX13330GEE/V+T

Manufacturer Part Number
MAX13330GEE/V+T
Description
IC AMP STEREO HEADPHONE 16-QSOP
Manufacturer
Maxim Integrated Products
Series
DirectDrive™r
Type
Class ABr
Datasheet

Specifications of MAX13330GEE/V+T

Output Type
Headphones, 2-Channel (Stereo)
Max Output Power X Channels @ Load
135mW x 2 @ 32 Ohm
Voltage - Supply
4 V ~ 5.5 V
Features
Depop, Short-Circuit Protection, Shutdown
Mounting Type
Surface Mount
Package / Case
16-QSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Automotive DirectDrive Headphone Amplifiers
with Output Protection and Diagnostics
ABSOLUTE MAXIMUM RATINGS
V
V
V
V
SHDN, DIAG to SGND................................-0.3V to (V
OUT_ to PGND.......................................(V
IN_ to SGND (MAX13330)................(V
IN_ to SGND (MAX13331) ..........................-0.3V to (V
C1P to PGND........................................-0.3V to (V
C1N to PGND..............................................(V
Output Short-Circuit Duration.....................................Continuous
ELECTRICAL CHARACTERISTICS
(V
MAX13330 gain = -1.5V/V (internally set), for MAX13331 gain = -1.5V/V (R
otherwise noted. Typical values are at T
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
GENERAL
Amplifier Supply Voltage Range
Charge-Pump Supply Voltage
Range
Charge-Pump Output Voltage
Quiescent Supply Current
Shutdown Supply Current
DIAGNOSTICS
Diagnostic Output Voltage
Short-to-SGND Threshold
Short-to-V
DD
SS
DD
SS
DD
, CPVSS to SGND ...............................................+0.3V to -6V
, CPVSS ...........................................................-0.3V to +0.3V
, CPVDD to SGND..............................................-0.3V to +6V
, CPVDD..........................................................-0.3V to +0.3V
_______________________________________________________________________________________
= V
Input-Logic High
Input-Logic Low
Input Leakage Current
to Full Operation Time
layer board. For detailed information on package thermal considerations, refer to http://www.maxim-ic.com/thermal-tutorial.
CPVDD
BAT
PARAMETER
Threshold
= +5V, V
SGND
= V
PGND
SYMBOL
SS
V
V
V
I
A
CPVDD
CPVSS
t
V
I
V
SON
DIAG
V
- 0.3V) to (V
DD
= +25°C, unless otherwise noted.) (Note 2)
DD
CPVSS
IH
IL
= 0, SHDN = V
SS
- 0.3V) to +0.3V
- 0.3V) to +45V
CPVDD
R
R
T
A
L
DIAG
DD
DD
DD
=
= +25°C
+ 0.3V)
+ 0.3V)
+ 0.3V)
+ 0.3V)
= ,
DD
, C1 = C2 = 1µF, R
CONDITIONS
Continuous Power Dissipation (T
Junction-to-Case Thermal Resistance (θ
Junction-to-Ambient Thermal Resistance (θ
Operating Temperature Range .........................-40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
16-Pin QSOP (derate 8.3mW/°C above +70°C)) ......666.7mW
θ
θ
JC
JA
IN
No fault
OUTR short to
SGND
OUTL short to
SGND
OUTR short to
V
OUTL short to
V
............................................................................... 37°C/W
............................................................................. 120°C/W
= 30kΩ, R
BAT
BAT
L
= ∞, resistive load referenced to ground, for
FB
= 45kΩ), T
0.22 x
0.47 x
0.72 x
0.97 x
MIN
V
V
V
V
130
130
4.0
4.0
-1
2
DD
DD
DD
DD
A
A
= T
= +70°C)
J
0.25 x
0.50 x
0.75 x
TYP
-V
100
V
V
V
= -40°C to +105°C, unless
10
DD
DD
DD
DD
JC
) (Note 1)
JA
) (Note 1)
0.02 x
0.28 x
0.53 x
0.78 x
MAX
V
V
V
V
5.5
5.5
0.8
+1
10
DD
DD
DD
DD
UNITS
mA
mA
mA
μA
μA
μs
V
V
V
V
V
V

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