SI7370DP Vishay Semiconductors, SI7370DP Datasheet

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SI7370DP

Manufacturer Part Number
SI7370DP
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Notes
a.
Document Number: 71874
S-41262—Rev. D, 05-Jul-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Continuous Source Current
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
60
60
(V)
J
ti
t A bi
Ordering Information: Si7370DP-T1
8
6.15 mm
D
J
J
0.011 @ V
= 150_C)
= 150_C)
t
0.013 @ V
a
a
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
PowerPAK SO-8
GS
GS
Bottom View
5
(W)
N-Channel 60-V (D-S) MOSFET
= 10 V
D
= 6 V
Si7370DP-T1—E3 (Lead (Pb)-Free)
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
T
T
T
T
t v 10 sec
4
A
A
A
A
I
G
= 25_C
= 70_C
= 25_C
= 70_C
D
15.8
14.5
(A)
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
D
D
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D PWM Optimized for Fast Switching
D 100% R
APPLICATIONS
D Primary Side Switch for 24-V DC/DC Applications
D Secondary Synchronous Rectifier
stg
with Low 1.07-mm Profile
g
10 secs
Typical
Tested
15.8
12.6
G
4.7
5.2
3.3
1.5
19
52
N-Channel MOSFET
ï55 to 150
"20
125
60
50
50
D
S
Steady State
Maximum
Vishay Siliconix
1.25
9.6
7.7
1.7
1.9
1.8
24
65
Si7370DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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SI7370DP Summary of contents

Page 1

... PowerPAK SO-8 6. Bottom View Ordering Information: Si7370DP-T1 Si7370DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Continuous Source Current Pulsed Drain Current ...

Page 2

... Si7370DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 71874 S-41262—Rev. D, 05-Jul-04 4000 3500 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si7370DP Vishay Siliconix Capacitance C iss C rss C oss 500 ï Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0 250 mA D 0.2 ï0.2 ï0.6 ï1.0 ï1.4 ï50 ï ï Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www.vishay.com 4 100 125 150 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï Document Number: 71874 S-41262—Rev. D, 05-Jul-04 ï2 ï Square Wave Pulse Duration (sec) Si7370DP Vishay Siliconix 1 10 www.vishay.com 5 ...

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