TPCS8201 TOSHIBA Semiconductor CORPORATION, TPCS8201 Datasheet

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TPCS8201

Manufacturer Part Number
TPCS8201
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPCS8201
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l
l
l
l
l
Maximum Ratings
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain curren
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
This transistor is an electrostatic sensitive device. Please handle with
caution.
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-mode: V
(Note 2a)
(Note 2b)
and (Note 5) please refer to the next page.
Characteristics
(Note 2a, Note 3b, Note 5)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
D C
Pulse
Single-device
operation
Single-device value
at dual operation
Single-device
operation
Single-device value
at dual operation
GS
= 20ká)
(Ta = 25°C)
DSS
th
(Note 3a)
(Note 3a)
(Note 3b)
(Note 3b)
(Note 1)
(Note 1)
(Note 4)
= 0.5~.2 V (V
= 0 µA (max) (V
DS (ON)
Symbol
V
V
P
P
P
V
P
TPCS8201
E
E
T
I
I
T
DGR
DSS
GSS
D (1)
D (1)
D (2)
fs
D(2)
I
DP
AR
AS
AR
stg
D
ch
DS
| = 3 S (typ.)
= 0 V, I
= 22 mº (typ.)
DS
= 20 V)
í55~150
Rating
0.075
0.75
0.35
D
32.5
±12
150
1.1
0.6
20
20
20
5
5
1
= 200 µA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.035 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
TPCS8201
2-3R1E
2003-02-20
Š
Š
Unit: mm

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TPCS8201 Summary of contents

Page 1

... DSS DGR V ±12 V GSS 1 0.75 D(2) P 0 0.35 D ( 0.075 150 ° °C í55~150 stg 1 TPCS8201 Unit: mm JEDEC Š JEITA Š TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 2003-02-20 ...

Page 2

... Symbol Max Single-device operation R 114 th (ch-a) (1) (Note 3a) dual operation R 167 th (ch-a) (2) (Note 3b) Single-device operation R 208 th (ch-a) (1) (Note 3a) dual operation R 357 th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( á 5 TPCS8201 Unit °C/W FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2003-02-20 ...

Page 3

... § (Ta = 25°C) Test Condition — DSF TPCS8201 Min Typ. Max Unit ±10 µA ¾ ¾ 10 µA ¾ ¾ 20 ¾ ¾ ¾ ¾ 0.5 1.2 V ¾ ¾ ...

Page 4

... TPCS8201 2003-02-20 ...

Page 5

... TPCS8201 2003-02-20 ...

Page 6

... TPCS8201 2003-02-20 ...

Page 7

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 TPCS8201 000707EAA 2003-02-20 ...

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