SI4936 Vishay Semiconductors, SI4936 Datasheet

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SI4936

Manufacturer Part Number
SI4936
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Notes
a.
Document Number: 71132
S-31989—Rev. B, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
Ordering Information: Si4936ADY
30
30
(V)
J
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
J
J
a
a
0.053 @ V
0.036 @ V
Si4936ADY-T1 (with Tape and Reel)
= 150_C)
= 150_C)
t
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
a
a
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
5.9
4.9
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
T
R
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
D
1
S
1
D
1
FEATURES
D TrenchFETr Power MOSFET
10 secs
Typical
5.9
4.7
1.7
2.0
1.3
50
90
32
- 55 to 150
G
"20
"30
30
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
62.5
D
110
4.4
3.6
0.9
1.1
0.7
40
2
S
Si4936ADY
2
D
2
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI4936 Summary of contents

Page 1

... Top View Ordering Information: Si4936ADY Si4936ADY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4936ADY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 71132 S-31989—Rev. B, 13-Oct-03 1000 800 600 400 200 24 30 1.6 1.4 1.2 1.0 0.8 0 0.08 0.06 0. 25_C J 0.02 0.00 1.0 1.2 1.4 Si4936ADY Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 5 100 T ...

Page 4

... Si4936ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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