PHD3055E NXP Semiconductors, PHD3055E Datasheet

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PHD3055E

Manufacturer Part Number
PHD3055E
Description
Manufacturer
NXP Semiconductors
Datasheet

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1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
[1]
1.
Pin Description
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT428 package.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
gate (g)
drain (d)
source (s)
mounting base,
connected to drain (d)
Pinning - SOT78, SOT428 simplified outline and symbol
N-channel standard level field-effect power transistor in a plastic package using
TrenchMOS™
Product availability:
[1]
PHP3055E in SOT78 (TO-220AB)
PHD3055E in SOT428 (D-PAK).
PHP/PHD3055E
TrenchMOS™ standard level FET
Rev. 06 — 25 March 2002
Fast switching
Low on-state resistance.
DC to DC converters
Switch mode power supplies.
Simplified outline
SOT78 (TO-220AB)
1
1 2
mb
technology.
3
MBK106
SOT428 (D-PAK)
Top view
1
mb
2
MBK091
3
Symbol
MBB076
Product data
g
d
s

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PHD3055E Summary of contents

Page 1

... TrenchMOS™ standard level FET Rev. 06 — 25 March 2002 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance. 3. Applications converters Switch mode power supplies. ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature Limit R ...

Page 4

Philips Semiconductors DS(AL)S ( Unclamped inductive load Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. 9397 750 09354 Product data ...

Page 5

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting base th(j-mb) R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance 10 Z th(j-mb) (K/W) = 0.5 1 0.2 ...

Page 6

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 7

Philips Semiconductors ( 0.4 0.8 1 Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical ...

Page 8

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 10. Gate-source threshold voltage as a function of junction temperature ...

Page 9

Philips Semiconductors ( 175 º 0 and 175 Fig 13. Source (diode forward) current as ...

Page 10

Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 11

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) ( ...

Page 12

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 06 20020325 - Product data; sixth version; supersedes PHD_PHP3055E_5 of 1 August 1999. Modifications: • The format of this specification has been redesigned to comply with Philips ...

Page 13

Philips Semiconductors Philips Semiconductors 11. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 14

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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