M5M29F25611VP Mitsumi Electronics, Corp., M5M29F25611VP Datasheet
M5M29F25611VP
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M5M29F25611VP Summary of contents
Page 1
... M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY PIN CONFIGURATION(TOP VIEW) GND 1 Vcc 2 3 DQ0 4 DQ1 5 DQ2 6 DQ3 7 GND M5M29F25611VP Vcc 17 DQ4 18 DQ5 19 DQ6 20 DQ7 GND 23 GND ...
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... GND SC 2 MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY 2048+64 16384 x (2048+64 X-Decoder Memory Matrix Data Register(2048+64) Input Y-Gating Data Control Y-Decoder Y-Address Counter Read/Program/ Erase Control MITSUBISHI LSIs M5M29F25611VP 8 Data Output Buffer ~ Rev.2.3.1 2001.2.2 ...
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... SA2 SA3 SA4 SA8 SA9 SA10 SA11 SA12 CA0 CA1 CA2 CA3 CA4 CA8 CA9 CA10 CA11 MITSUBISHI LSIs M5M29F25611VP Bytes Bytes Bytes Bytes Bytes Bytes Column Address 83FH SA6 SA5 SA7 SA13 X X CA5 CA6 CA7 X X (Note2) ...
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... IHR = and = V IL level while the R/ pin outputs and Address is latched when Also, no serial clock can be input during V OL MITSUBISHI LSIs M5M29F25611VP (note3) DQ0 - DQ7 Status register outputs ...
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... Write 3+2h(note6) Write With CA 4+2h(note6) (note 7) Write With CA 4+2h(note6) (note 7) is set to V IHR is low and the device identifier code is output when MITSUBISHI LSIs M5M29F25611VP Second cycle Data Data Operation mode in in out Write SA(1) (note 4) 00H Write SA(1) (note 4) 00H Write ...
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... After the programming starts,the program completion can be checked through the R/ single and status data polling. The sector valid data should be included in the program data PD2048-PD2111. In this mode, E/W number of times must be counted whenever program(4) execute. 6 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY is ...
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... Sector Address Memory Array 0 2111 Column 0 Register address Serial read(1), (With CA) Program(1), (With CA) Program(4), (With CA) and and , respectively MITSUBISHI LSIs M5M29F25611VP 16383 Sector Address Memory Array 0 2048 2111 0 Register Serial read(2) Program( the status register read Rev ...
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... Command / Address / Data Input Sequence 8 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... Command / Address / Data Input Sequence 9 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... Command / Address / Data Input Sequence 10 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... Sector address input SC, Program finish ERROR (note1) 01H Error Error Standby Output (note3) disable (note1) 12H FFH or FFH, Error Status Flag is cleared MITSUBISHI LSIs M5M29F25611VP CA(1)',CA(2 Read(1), (2) BUSY Status B0H Erase start register read SC, PD(m)~ PD(m+j) Status 40H Program register start input read ...
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... 2mA OL 2 -2mA OH 50ns. min = -2.0V for pulse width 20ns 20ns over the specified maximum value MITSUBISHI LSIs M5M29F25611VP Ratings Unit +70 °C -65 to +125 °C -10 to +80 °C Limits Unit Min Typ Max 6 pF ...
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... Notes : 1. tDF is a time after which the DQ pins become open. 2. tWSD(min) is specified as a reference point only for SC, if tWSD is greater than the specified tWSD(min) limit, then access time is controlled exclusively by tSAC. 13 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Limits ...
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... CES RP (note2) t BSY Ready level as shown in page 12 at the rising and falling edges of Vcc to V ILR level specified in page 12 while DQ7 outputs the V IHR level MITSUBISHI LSIs M5M29F25611VP t t CEH CESR t CWRH t t VRH DFP (note1) Undefined level in the V OL Rev ...
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... SAC SAC SAC SAC t OEL SA(2) out out out out D2048 D2049 DBR HighZ t RBSY . MITSUBISHI LSIs M5M29F25611VP t COH (note1) t CPH t CEH CDH SOH t CDS (note3) out D2111 / (note2) FFH out D2111 Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP Rev.2.3.1 2001.2.2 ...
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... Min GND GND OUT ± 0. ± 0. GND ± 0. programming - In erase -0.3 2 2mA OL 2 -2mA OH 20ns. MITSUBISHI LSIs M5M29F25611VP Limits Unit Typ Max - 2 µ µ 0.3 µ µ Rev ...
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... OE to output delay t high to output float setup time Notes : 1. tDF is a time after which the DQ pins become open. 19 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Limits Test condition Min Typ 120 - ...
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... SC to output hold setup for hold time for CWH t hold time for on Recovery Read Mode CWHR t hold time for WWH 20 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Limits Test condition Min Typ 1 ...
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... CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY t t CEH CWC OEPS t WPH CDS WP t CDH t t CDH SCHW SA(2) B0H DQ7 (note1) MITSUBISHI LSIs M5M29F25611VP t COS t t ASE RDY t CDS t DF DQ7=V OH (note2) HighZ . V OL Rev.2.3.1 2001.2.2 ...
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... SW t CDH t SCC t (note1) CDH t t SPL SCHW SDH SDS DS PD0 PD1 PD2111 40H t DB HighZ MITSUBISHI LSIs M5M29F25611VP t COS RDY t CDS t ASP( DQ7=V DQ7 (note3) HighZ (note2 Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP Rev.2.3.1 2001.2.2 ...
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... SW t CDH t SCC t CDH (note1 SPL SCHW SDH SDS DS PD0 PD1 PD2111 40H t DB HighZ MITSUBISHI LSIs M5M29F25611VP t COS RDY t ASP(2) t CDS DQ7=V DQ7 (note3) HighZ (note2 Rev.2.3.1 2001.2.2 ...
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... CEH t OEPS CDSS WP t CDH t SCC t (note1) CDH t SPL t SCHW SDH t SDS HighZ MITSUBISHI LSIs M5M29F25611VP t COS RDY t ASP(3) t CDS DQ7=V DQ7 (note3) HighZ (note2 Rev.2.3.1 2001.2.2 ...
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... SPL SCHW WSD SDH t SDS DS PD0 PD1 PD2111 40H HighZ t RBSY MITSUBISHI LSIs M5M29F25611VP t COS RDY t ASP (4) t CDS DQ7=V DQ7 (note3) HighZ (note2 Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP Rev.2.3.1 2001.2.2 ...
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... MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ MITSUBISHI LSIs M5M29F25611VP Rev.2.3.1 2001.2.2 ...
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... Note : 1. The status returns to the Standby at the rising edge of 30 MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY t COH (note1) t COS t CDOH t t CDAC t CDAC SCS CDF CDF Device Manufacturer Code Code HighZ . MITSUBISHI LSIs M5M29F25611VP t COH (note1 Status Register Rev.2.3.1 2001.2.2 ...
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... CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY t COH (note1) t CPH t CWHR t OES (note2) SCC SCC SOH SPL SAC SAC SAC DF SAC out out out D0 D1 D2111 HighZ . MITSUBISHI LSIs M5M29F25611VP t CEH CDH t CDS (note3) (note2) FFH Rev.2.3.1 2001.2.2 ...
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... CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY t t CEH CWC OEPS t WPH CDS WP t CDH t t CDH SCHW SA(2) 40H DQ7 (note1) MITSUBISHI LSIs M5M29F25611VP t COS t t ASP(4) RDY t CDS t DF DQ7=V OH (note2) HighZ . V OL Rev.2.3.1 2001.2.2 ...
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... M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Rev.2.3.1 MITSUBISHI LSIs 2001.2.2 ...
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... OL "V " = Fail "V " = Pass OH OL "V " = Fail "V " = Pass OH OL Outputs a and should be masked out during the status data polling V OL mode. MITSUBISHI LSIs M5M29F25611VP to indicate that V OL when the operation V OH Definition Rev.2.3.1 2001.2.2 ...
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... The write/erase endurance cycles. 35 MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY 820H 821H 822H 823H 1CH 71H C7H 1CH Min 16,057 (98%) 5 MITSUBISHI LSIs M5M29F25611VP 824H 825H C7H 71H Rev.2.3.1 2001.2.2 ...
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... Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 36 M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY Remember to give due they do not convey any ...