MRF6S19100H Freescale Semiconductor, Inc, MRF6S19100H Datasheet

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MRF6S19100H

Manufacturer Part Number
MRF6S19100H
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier N - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for N - CDMA base station applications with frequencies from 1930
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Derate above 25°C
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
out
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 22 Watts Avg., Full Frequency Band, IS - 95 (Pilot, Sync, Paging,
C
= 25°C
Characteristic
Rating
DD
Operation
μ″ Nominal.
DD
= 28 Volts, I
DQ
= 900 mA,
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
Document Number: MRF6S19100H
D
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF6S19100HR3 MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V
MRF6S19100HSR3
MRF6S19100HSR3
MRF6S19100HR3
MRF6S19100HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
- 65 to +150
Value
2 x N - CDMA
- 0.5, +68
- 0.5, +12
Value
0.44
0.50
398
150
200
2.3
(1,2)
Rev. 4, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF6S19100H Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 900 mA Operation DD μ″ Nominal. Document Number: MRF6S19100H Rev. 4, 5/2006 MRF6S19100HR3 MRF6S19100HSR3 1930- 1990 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 ...

Page 2

... Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19100HR3 MRF6S19100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Microstrip Z4 0.950″ x 0.084″ Microstrip Z5 0.457″ x 0.940″ Microstrip Z6 0.083″ x 0.940″ Microstrip Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values Part B1 RF Bead C1, C2 0.6- 4.5 pF Variable Capacitors, Gigatronics Chip Capacitor C4 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout MRF6S19100HR3 MRF6S19100HSR3 4 ...

Page 5

... Watts Avg. out −25 −5 −30 −10 −35 −15 −40 −20 −45 1990 = 44 Watts Avg. out = 28 Vdc 1958.75 MHz 1961.25 MHz 450 mA 675 mA DQ 1125 mA 900 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S19100HR3 MRF6S19100HSR3 300 5 ...

Page 6

... η OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 TYPICAL CHARACTERISTICS P1dB = 50.9 dBm (124 100 30 31 Figure 8. Pulse CW Output Power versus ...

Page 7

... Figure 14 Carrier N - CDMA Spectrum 190 200 210 2 1.2288 MHz Channel BW −IM3 in +IM3 in 1.2288 MHz 1.2288 MHz Integrated BW Integrated BW −ACPR in 30 kHz +ACPR in 30 kHz Integrated BW Integrated BW −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) MRF6S19100HR3 MRF6S19100HSR3 6 7.5 7 ...

Page 8

... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S19100HR3 MRF6S19100HSR3 1990 MHz f = 1930 MHz Z load f = 1990 MHz = 5 Ω 1930 MHz Vdc 900 mA Avg out source load MHz Ω Ω 1930 1.57 - j3.50 2.26 - j2.31 1960 1.83 - j3.29 2.22 - j2.13 1990 2.34 - j3.71 2.14 - j2.00 = Test circuit impedance as measured from source gate to ground ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF6S19100HR3 MRF6S19100HSR3 9 ...

Page 10

... MRF6S19100HR3 MRF6S19100HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19100HR3 MRF6S19100HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19100HR3 MRF6S19100HSR3 Document Number: MRF6S19100H Rev. 4, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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