MRF6S21140H Freescale Semiconductor, Inc, MRF6S21140H Datasheet
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MRF6S21140H
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MRF6S21140H Summary of contents
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... Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004-2007. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1200 mA Operation DD Document Number: MRF6S21140H Rev. 4, 5/2007 MRF6S21140HR3 MRF6S21140HSR3 2110 - 2170 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 ...
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... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21140HR3 MRF6S21140HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Z6, Z7 0.833″ x 0.083″ Microstrip (quarter wave length for supply purpose) Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values Part C1, C3, C8, C9, C10, C11 6.8 pF Chip Capacitors C2 0.8 pF Chip Capacitor ...
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... C19 Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout MRF6S21140HR3 MRF6S21140HSR3 4 C10 C4 C3 C12 C13 C17 C18 C14 C15 C11 MRF6S21140H Rev C16 Device Data Freescale Semiconductor ...
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... Watts Avg. out −24 −12 −27 −15 −30 −18 −33 −21 2220 = 60 Watts Avg. out 1800 mA 1500 mA 1200 mA 900 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21140HR3 MRF6S21140HSR3 400 5 ...
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... P , OUTPUT POWER (WATTS) AVG. out Figure Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S21140HR3 MRF6S21140HSR3 6 TYPICAL CHARACTERISTICS P1dB = 52 dBm (158 100 Figure 8. Pulsed CW Output Power versus 18 − ...
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... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −70 −80 − 230 250 = 27.5%. D 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW −IM3 in 3.84 MHz BW +IM3 in 3.84 MHz BW 3.84 MHz BW −20 −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21140HR3 MRF6S21140HSR3 ...
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... MHz f = 2080 MHz Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S21140HR3 MRF6S21140HSR3 load = 25 Ω 2200 MHz Z source f = 2080 MHz Vdc 1200 mA Avg out source load MHz Ω Ω 2080 7.53 - j10.99 1.40 - j3.03 2110 7.57 - j10.67 1 ...
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... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF6S21140HR3 MRF6S21140HSR3 9 ...
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... Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Added Product Documentation and Revision History MRF6S21140HR3 MRF6S21140HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6S21140H Rev. 4, 5/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...