MRF6S9130H Freescale Semiconductor, Inc, MRF6S9130H Datasheet

no-image

MRF6S9130H

Manufacturer Part Number
MRF6S9130H
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF6S9130HR3
Quantity:
77
Part Number:
MRF6S9130HR5
Manufacturer:
FREESALE
Quantity:
20 000
Part Number:
MRF6S9130HSR5
Manufacturer:
AD
Quantity:
1 400
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for N - CDMA, GSM and GSM EDGE base station applications
I
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
130 Watts, Full Frequency Band (921 - 960 MHz)
P
Output Power
DQ
Derate above 25°C
out
Power Gain — 18 dB
Drain Efficiency — 63%
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 48.1 dBc in 30 kHz Bandwidth
Power Gain — 18.5 dB
Drain Efficiency — 44%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 1.5% rms
= 950 mA, P
= 56 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 27 Watts Avg., Full Frequency Band, IS - 95 CDMA
C
= 25°C
DD
= 28 Volts, I
Rating
DD
DD
Operation
= 28 Volts, I
μ
″ Nominal.
DQ
= 950 mA, P
DQ
= 950 mA,
out
DD
=
= 28 Volts,
Symbol
V
V
T
P
T
DSS
T
GS
stg
D
C
J
CASE 465A - 06, STYLE 1
Document Number: MRF6S9130H
CASE 465 - 06, STYLE 1
MRF6S9130HSR3
MRF6S9130HR3 MRF6S9130HSR3
MRF6S9130HSR3
MRF6S9130HR3
MRF6S9130HR3
880 MHz, 27 W AVG., 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
SINGLE N - CDMA
- 65 to +150
- 0.5, +68
- 0.5, +12
Value
389
150
200
2.2
Rev. 4, 5/2006
W/°C
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF6S9130H

MRF6S9130H Summary of contents

Page 1

... Volts 950 mA out = 28 Volts 950 mA Operation DD ″ Nominal. μ Document Number: MRF6S9130H Rev. 4, 5/2006 MRF6S9130HR3 MRF6S9130HSR3 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S9130HR3 CASE 465A - 06, STYLE 780S MRF6S9130HSR3 ...

Page 2

... Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched on input. MRF6S9130HR3 MRF6S9130HSR3 2 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... Vdc η D IRL P1dB Min Typ Max Unit = 28 Vdc 950 mA — 18.5 — dB — 44 — % — 1.5 — % rms — — dBc — — dBc = 950 mA 130 W, DQ out — 18 — dB — 63 — % — — dB — 135 — W MRF6S9130HR3 MRF6S9130HSR3 3 ...

Page 4

... Microstrip Z5 0.173″ x 0.220″ Microstrip Z6, Z11 0.200″ x 0.220″ x 0.620″ Taper Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 Ferrite Beads, Short C1, C13, C14 47 pF Chip Capacitors C2 8 ...

Page 5

... C7 C1 Figure 2. MRF6S9130HR3(SR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor B2 900 MHz Rev C10 C19 C16 C17 C18 C15 C14 L2 C13 C12 C11 MRF6S9130HR3 MRF6S9130HSR3 5 ...

Page 6

... Vdc 878.75 MHz 881.25 MHz DD Two−Tone Measurements, 2.5 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9130HR3 MRF6S9130HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 950 mA, N−CDMA IS−95 Pilot, Sync, DQ ...

Page 7

... MHz 32 32.5 33 33.5 34 34 INPUT POWER (dBm) in Input Power Vdc 950 880 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power 950 880 MHz 200 250 MRF6S9130HR3 MRF6S9130HSR3 Actual 36 36 300 7 ...

Page 8

... Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. Single - Carrier CCDF N - CDMA MRF6S9130HR3 MRF6S9130HSR3 8 TYPICAL CHARACTERISTICS 90 100 110 120 130 140 150 160 ...

Page 9

... Z Z source load MHz Ω Ω 850 0.89 - j1.18 1.50 - j0.09 865 0.87 - j1.03 1.52 + j0.11 880 0.85 - j0.89 1.55 + j0.31 895 0.83 - j0.75 1.60 + j0.51 910 0.84 - j0.64 1.68 + j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF6S9130HR3 MRF6S9130HSR3 9 ...

Page 10

... MRF6S9130HR3 MRF6S9130HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S9130HR3 MRF6S9130HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S9130HR3 MRF6S9130HSR3 Document Number: MRF6S9130H Rev. 4, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords