PHN210T NXP Semiconductors, PHN210T Datasheet

Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHN210T

Manufacturer Part Number
PHN210T
Description
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
PHN210T
Manufacturer:
NXP
Quantity:
72 000
Part Number:
PHN210T
Manufacturer:
PHILIPS/飞利浦
Quantity:
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Part Number:
PHN210TЈ¬118
Manufacturer:
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Philips Semiconductors
FEATURES
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
GENERAL DESCRIPTION
Dual
mode field-effect transistor in a
plastic envelope using ’trench’
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator
The PHN210T is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 Surface mounted on FR4 board, t
March 1999
Dual N-channel enhancement mode
TrenchMOS
SYMBOL
V
V
V
V
I
I
I
P
T
D
D
DM
DS
DS
DGR
GS
tot
stg
, T
j
N-channel
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per MOSFET
Drain current per MOSFET (both
MOSFETs conducting)
Drain current per MOSFET (pulse
peak value)
Total power dissipation (either or
both MOSFETs conducting)
Storage & operating temperature
TM
enhancement
transistor
1
10 sec
PINNING
SYMBOL
1
PIN
5,6
7,8
1
1
2
3
4
source 1
gate 1
source 2
gate 2
drain 2
drain 1
d1
s1
CONDITIONS
T
R
T
T
T
T
T
T
T
j
a
a
a
a
a
a
a
GS
= 25 ˚C to 150˚C
DESCRIPTION
= 25 ˚C
= 70 ˚C
= 25 ˚C
= 70 ˚C
= 25 ˚C
= 25 ˚C
= 70 ˚C
d1
g1
= 20 k
1
d2
s2
d2
g2
SOT96-1
QUICK REFERENCE DATA
R
R
DS(ON)
MIN.
DS(ON)
- 65
-
-
-
-
-
-
-
-
-
-
-
pin 1 index
200 m (V
100 m (V
V
I
Product specification
D
DS
= 3.4 A
MAX.
1
8
= 30 V
150
3.4
2.8
2.4
1.9
1.3
30
30
30
14
2
20
7
2
PHN210T
6
3
GS
GS
= 4.5 V)
= 10 V)
5
4
Rev 1.000
UNIT
W
W
˚C
V
V
V
V
A
A
A
A
A

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PHN210T Summary of contents

Page 1

... Applications:- • Motor and relay drivers • d.c. to d.c. converters • Logic level translator The PHN210T is supplied in the SOT96-1 (SO8) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ...

Page 2

... Resistive load Measured from drain lead to centre of die Measured from source lead to source bond pad MHz Product specification PHN210T TYP. MAX. UNIT - 62.5 K/W 150 - K/W MIN. MAX. UNIT - 3.4 A MIN. TYP. MAX. UNIT ...

Page 3

... Fig.3. Safe operating area f & Zth j-a (K/W) 100 D = 0.5 0.2 10 0.05 1 0.1 0.01 1E-06 100 120 140 Product specification PHN210T MIN. TYP. MAX. UNIT - - 2 0.82 1 Drain-Source Voltage, VDS ( ˚ f single pulse; parameter 0.1 0. tp/T ...

Page 4

... Fig.9. Normalised drain-source on-state resistance VGS(TO 150 4 -60 -40 - GS(TO) 4 Product specification PHN210T 150 Drain current ˚ f parameter SOT223 30V Trench Normalised RDS(ON) = f(Tj 100 ...

Page 5

... Fig.15. Maximum permissible non-repetitive iss oss rss avalanche current ( Product specification PHN210T 150 Drain-Source Voltage, VSDS (V) ); conditions parameter T SDS GS PHN210 prior to avalanche =125 C VDS tp ID 1E-05 1E-04 1E-03 Avalanche time, tp (s) ) versus avalanche time (t AS ...

Page 6

... E 0.49 0.25 5.0 4.0 6.2 1.27 0.25 1.05 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.050 0.01 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES IEC JEDEC EIAJ 076E03S MS-012AA Fig.16. SOT96 surface mounting package. 6 Product specification PHN210T SOT96 detail X ( 1.0 0.7 0.7 0.25 0.25 0.1 0.4 0.6 0 0.039 0.028 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1999 7 Product specification PHN210T Rev 1.000 ...

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