M5M5408BFP-55HI MITSUBISHI, M5M5408BFP-55HI Datasheet

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M5M5408BFP-55HI

Manufacturer Part Number
M5M5408BFP-55HI
Description
4194304-bit (524288-word by 8-bit) CMOS static RAM
Manufacturer
MITSUBISHI
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
M5M5408BFP-55HI
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
revision-K0.1e, ' 98.07.30
M5M5408BFP/TP/RT/KV/KR
PART NAME TABLE
524,288-words by 8-bit, fabricated by
performance 0.25µm CMOS technology.
simple interfacing , battery operating and battery backup are the
important design objectives.
TSOP and 32-pin 8mm x 13.4mm STSOP packages. Two types of
TSOPs and two types of STSOPs are available , M5M5408BTP
(normal-lead-bend TSOP) , M5M5408BRT (reverse-lead-bend
TSOP)
M5M5408BKR (reverse-lead-bend STSOP). These two types
TSOPs and two types STSOPs are suitable for a surface mounting
on double-sided printed circuit boards.
into three versions; "Standard", "W-version", and "I-version". Those
are summarized in the part name table below.
DESCRIPTION
-40 ~ +85°C
* "typical" parameter is sampled, not 100% tested.
The M5M5408B is a family of 4-Mbit static RAMs organized as
The M5M5408B is suitable for memory applications where a
M5M5408B is packaged in 32-pin plastic SOP, 32-pin plastic
-20 ~ +85°C
temperature
From the point of operating temperature, the family is divided
0 ~ +70°C
W-
Operating
Standard
I-
Version,
version
version
,
M5M5408BKV
(## stands for "FP","TP",
M5M5408B## -55L
M5M5408B## -70L
M5M5408B## -10L
M5M5408B## -55H
M5M5408B## -70H
M5M5408B## -10H
M5M5408B## -55LW
M5M5408B## -70LW
M5M5408B## -10LW
M5M5408B## -55HW
M5M5408B## -70HW
M5M5408B## -10HW
M5M5408B## -55LI
M5M5408B## -70LI
M5M5408B## -10LI
M5M5408B## -55HI
M5M5408B## -70HI
M5M5408B## -10HI
"RT","KV"or"KR")
Part name
(normal-lead-bend
Supply
Power
Mitsubishi's high-
5.0V
5.0V
5.0V
5.0V
5.0V
5.0V
MITSUBISHI ELECTRIC
STSOP)
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
Access
100ns
100ns
100ns
100ns
100ns
100ns
max.
time
55ns
70ns
55ns
70ns
55ns
70ns
55ns
70ns
55ns
70ns
55ns
70ns
and
FEATURES
Stand-by current Icc
• Single +5V power supply
• Small stand-by current: 0.4µA(3V,typ.)
• No clocks, No refresh
• Data retention supply voltage=2.0V to 5.5V
• All inputs and outputs are TTL compatible.
• Easy memory expansion by S
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE prevents data contention in the I/O bus
• Process technology: 0.25µm CMOS
• Package:
typical *
0.4µA
0.4µA
0.4µA
25°C
M5M5408BFP: 32 pin 525 mil SOP
M5M5408BTP/RT: 32 pin 400 mil TSOP(ll)
M5M5408BKV/KR: 32 pin 8mm x 13.4mm STSOP
---
---
---
50µA
70°C
10µA
---
---
---
---
Ratings (max.)
PRELIMINARY
(PD)
Notice: This is not a final specification.
Some parametric limits are subject to change
, Vcc=3.0V
100µA
100µA
85°C
20µA
20µA
---
---
MITSUBISHI LSIs
(5.0V, typ.)
(10MHz)
current
(1MHz)
Active
50mA
25mA
Icc1
1

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M5M5408BFP-55HI Summary of contents

Page 1

... Three-state outputs: OR-tie capability STSOP) and • OE prevents data contention in the I/O bus • Process technology: 0.25µm CMOS • Package: M5M5408BFP: 32 pin 525 mil SOP M5M5408BTP/RT: 32 pin 400 mil TSOP(ll) M5M5408BKV/KR: 32 pin 8mm x 13.4mm STSOP Access Stand-by current Icc Power typical * ...

Page 2

... M5M5408BFP/TP/RT/KV/KR PIN CONFIGURATION (TOP VIEW GND (0V) 16 Outline 32P2M-A (FP) 32P3Y-H (TP ...

Page 3

... M5M5408BFP/TP/RT/KV/KR FUNCTION The M5M5408BFP,TP,RT,KV,KR is organized as 524,288- words by 8-bit. These devices operate on a single +5.0V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. A write operation is executed during the S low and W low overlap time ...

Page 4

... M5M5408BFP/TP/RT/KV/KR ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage V cc Input voltage Output voltage O P Power dissipation d Operating T a temperature T Storage temperature stg DC ELECTRICAL CHARACTERISTICS Symbol Parameter High-level input voltage Low-level input voltage IL V High-level output voltage 1 OH1 V High-level output voltage 2 ...

Page 5

... CL Including scope and jig capacitance Fig.1 Output load Limits M5M5408BFP,TP,RT, M5M5408BFP,TP,RT, KV,KR-55 KV,KR-70 Max Min Max Min 100 Limits M5M5408BFP,TP,RT, M5M5408BFP,TP,RT, KV,KR-55 KV,KR-70 Max Min Max Min 70 100 ...

Page 6

... M5M5408BFP/TP/RT/KV/KR (4)TIMING DIAGRAMS Read cycle A 0~18 S (Note3) OE (Note3 "H" level DQ 1~8 Write cycle ( W control mode ) A 0~18 S (Note3 1~8 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM ( ( (OE ( (A- (W) ...

Page 7

... M5M5408BFP/TP/RT/KV/KR Write cycle (S control mode (Note3) DQ 1~8 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during the overlap of a low S and a low W. Note goes low simultaneously with or prior to S,the output remains in the high impedance state. Note 6: Don't apply inverted phase signal externally when DQ pin is in output mode. ...

Page 8

... M5M5408BFP/TP/RT/KV/KR POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD) Chip select input (S) Power down Icc (PD) supply current (2) TIMING REQUIREMINTS Symbol Parameter t Power down set up time su (PD) Power down recovery time t rec (PD) (3) TIMING DIAGRAM ...

Page 9

... M5M5408BFP/TP/RT/KV/KR Revision History Revision No. History K0.1e The first edition 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM Date '98.7.30 MITSUBISHI ELECTRIC MITSUBISHI LSIs PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change Preliminary 9 ...

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