TE28F160B3B90 Intel Corporation, TE28F160B3B90 Datasheet
TE28F160B3B90
Related parts for TE28F160B3B90
TE28F160B3B90 Summary of contents
Page 1
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 n Flexible SmartVoltage Technology 2.7 V–3.6 V Read/Program/Erase Fast Production PP Programming n 2 1.65 V ...
Page 2
... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 5937 Denver, CO 80217-9808 or call 1-800-548-4725 or visit Intel’s Website at http://www.intel.com COPYRIGHT © INTEL CORPORATION 1996, 1997,1998 Third-party brands and names are the property of their respective owners * CG-041493 ...
Page 3
INTRODUCTION .............................................5 1.1 Smart 3 Advanced Boot Block Flash Memory Enhancements ..............................5 1.2 Product Overview.........................................6 2.0 PRODUCT DESCRIPTION..............................6 2.1 Package Pinouts ..........................................6 2.2 Block Organization .....................................11 2.2.1 Parameter Blocks ................................11 2.2.2 Main Blocks .........................................11 3.0 PRINCIPLES OF OPERATION .....................11 ...
Page 4
SMART 3 ADVANCED BOOT BLOCK REVISION HISTORY Number -001 Original version Section 3.4, V Program and Erase Voltages , added -002 PP Updated Figure 9: Automated Block Erase Flowchart Updated Figure 10: Erase Suspend/Resume Flowchart (added program to table) Updated ...
Page 5
INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2 2.7 V– 3.6 V I/Os and a low ...
Page 6
SMART 3 ADVANCED BOOT BLOCK 1.2 Product Overview Intel provides the most flexible voltage solution in the flash industry, providing three discrete voltage supply pins: V for read operation CCQ swing, and V for program and erase operation. ...
Page 7
WE ...
Page 8
SMART 3 ADVANCED BOOT BLOCK WE CCQ 11 F GND D ...
Page 9
WE CCQ 15 F GND NOTES: 1. ...
Page 10
SMART 3 ADVANCED BOOT BLOCK The pin descriptions table details the usage of each device pin. Table 2. Smart 3 Advanced Boot Block Pin Descriptions Symbol Type ADDRESS INPUTS for memory addresses. Addresses are internally A –A INPUT 0 21 ...
Page 11
Table 2. Smart 3 Advanced Boot Block Pin Descriptions (Continued) Symbol Type V INPUT OUTPUT V CCQ the V CC can be driven at 1.65 V–2 achieve lowest power operation (see Section 4.4, DC Characteristics . This input ...
Page 12
SMART 3 ADVANCED BOOT BLOCK When V < the device will only execute the PP PPLK following commands successfully: Read Array, Read Status Register, Clear Status Register and Read Identifier. The device provides standard EEPROM read, standby and ...
Page 13
READ The flash memory has four read modes available: read array, read identifier, read status and read query. These modes are accessible independent of the V voltage. The appropriate Read Mode PP command must be issued to the CUI ...
Page 14
SMART 3 ADVANCED BOOT BLOCK There are two commands that modify array data: Program (40H) and Erase (20H). Writing either of these commands to the internal Command User Interface (CUI) initiates a sequence of internally - timed functions that culminate ...
Page 15
Table 4. Command Codes and Descriptions (Continued) Code Device Mode D0 Erase Confirm If the previous command was an Erase Set-Up command, then the CUI will close the address and data latches, and begin erasing the block indicated on the ...
Page 16
SMART 3 ADVANCED BOOT BLOCK 3.2.3 READ STATUS REGISTER The device status register indicates when a program or erase operation is complete and the success or failure of that operation. To read the status register issue the Read Status Register ...
Page 17
A Read Array command can now be written to the CUI to read data from blocks other than that which is suspended. The only other valid commands while program is suspended, are Read Status Register, Read Identifier, and Program Resume. ...
Page 18
SMART 3 ADVANCED BOOT BLOCK Table 6. Command Bus Definitions Command Notes Read Array Read Identifier 2 Read Status Register Clear Status Register Program 3 Block Erase/Confirm Program/Erase Suspend Program/Erase Resume NOTES: PA: Program Address PD: Program Data IA: Identifier ...
Page 19
Table 7. Status Register Bit Definition WSMS ESS SR.7 = WRITE STATE MACHINE STATUS (WSMS Ready 0 = Busy SR.6 = ERASE-SUSPEND STATUS (ESS Erase Suspended 0 = Erase In Progress/Completed SR.5 ...
Page 20
SMART 3 ADVANCED BOOT BLOCK 3.3 Block Locking The Smart 3 Advanced Boot Block flash memory architecture features two hardware-lockable parameter blocks. 3.3.1 WP FOR BLOCK LOCKING IL The lockable blocks are locked when WP any ...
Page 21
ACTIVE POWER With CE logic - low level and RP logic - high level, the device is in the active mode. Refer to the DC Characteristic tables for I current values. CC Active power is ...
Page 22
SMART 3 ADVANCED BOOT BLOCK After any program or block erase operation is complete (even after V transitions down the CUI must be reset to read array mode PPLK via the Read Array command if access ...
Page 23
ELECTRICAL SPECIFICATIONS 4.1 Absolute Maximum Ratings* Extended Operating Temperature During Read .......................... –40 °C to +85 °C During Block Erase and Program.......................... –40 °C to +85 °C Temperature Under Bias ....... –40 °C to +85 °C Storage Temperature................. –65 ...
Page 24
SMART 3 ADVANCED BOOT BLOCK 4.2 Operating Conditions Symbol Parameter T Operating Temperature Supply Voltage CC CC1 V CC2 V CC3 V I/O Supply Voltage CCQ1 V CCQ2 V CCQ3 V Program and Erase Voltage PP1 V ...
Page 25
DC Characteristics V 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V CCQ Sym Parameter Note Typ I Input Load Current Output Leakage 6 ...
Page 26
SMART 3 ADVANCED BOOT BLOCK 4.4 DC Characteristics (Continued) V 2.7 V–3 2.7 V–3.6 V CCQ Sym Parameter Note Min V Input Low Voltage –0 Input High Voltage CCQ IH –0.4V V Output Low ...
Page 27
V CCQ V CCQ INPUT 2 0.0 NOTE: AC test inputs are driven at V for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output timing ends CCQ Input rise and fall times ...
Page 28
SMART 3 ADVANCED BOOT BLOCK 4.5 AC Characteristics —Read Operations Product 3.0 V–3.6 V 2.7 V–3 Sym Parameter Note R1 t Read Cycle Time AVAV R2 t Address to AVQV Output Delay R3 t CE# to Output 2 ...
Page 29
Device and Address Selection V IH ADDRESSES (A) Address Stable CE# ( OE# ( WE# ( High Z DATA (D/ ...
Page 30
SMART 3 ADVANCED BOOT BLOCK 4.6 AC Characteristics —Write Operations Product # Symbol Parameter RP# High Recovery to WE# PHWL (CE#) Going Low t PHEL CE# (WE#) Setup to WE# ELWL (CE#) Going Low ...
Page 31
Program and Erase Timings Symbol Parameter t 8-KB Parameter Block BWPB Program Time (Byte) 4-KW Parameter Block Program Time (Word) t 64-KB Main Block BWMB Program Time (Byte) 32-KW Main Block Program Time(Word WHQV1 EHQV1 Byte ...
Page 32
SMART 3 ADVANCED BOOT BLOCK ADDRESSES [ CE#(WE#) [E(W OE# [ WE#(CE#) [W(E High Z DATA [D/Q] ...
Page 33
RESET OPERATIONS RP# (P) (A) Reset during Read Mode RP# (P) (B) Reset during Program or Block Erase, RP# (P) (C) Reset Program or Block Erase, Figure 9. AC Waveform: Deep Power-Down/Reset Operation Symbol Parameter t RP# Low to ...
Page 34
SMART 3 ADVANCED BOOT BLOCK 6.0 ORDERING INFORMATION Package TE = 40-Lead/48-Lead TSOP GT = 48-Ball µBGA* CSP Product line designator for all Intel Flash products ...
Page 35
Ordering Information Valid Combinations 40-Lead TSOP Ext. Temp. GT28F032B3TA95 32 M GT28F032B3BA95 GT28F032B3TA115 GT28F032B3BA115 Ext. Temp. (2) TE28F016B3TA90 GT28F016B3TA90 16 M (2) TE28F016B3BA90 GT28F016B3BA90 (2) TE28F016B3TA110 GT28F016B3TA110 (2) TE28F016B3BA110 GT28F016B3BA110 Ext. Temp. TE28F008B3TA90 (2) GT28F008B3T90 8 M TE28F008B3BA90 (2) GT28F008B3B90 ...
Page 36
SMART 3 ADVANCED BOOT BLOCK 7.0 ADDITIONAL INFORMATION Order Number 210830 1997 Flash Memory Databook Smart 3 Advanced Boot Block Flash Memory Family Specification Update 297948 297835 28F160B3 Specification Update Smart 3 Advanced Boot Block Algorithms (‘C’ and assembly) http://developer.intel.com/design/flcomp ...
Page 37
APPENDIX A WRITE STATE MACHINE CURRENT/NEXT STATES Current SR.7 Data Read Program State When Array Setup Read (FFH) (10/40H) Read Array “1” Array Read Program Array Setup Read Status “1” Status Read Program Array Setup Read “1” Identifier Read Program ...
Page 38
SMART 3 ADVANCED BOOT BLOCK ACCESS TIME VS. CAPACITIVE LOAD Access Time vs. Load Capacitance Load Capacitance (pF) This chart shows a derating curve for device access time with respect ...
Page 39
APPENDIX C ARCHITECTURE BLOCK DIAGRAM V CCQ Output Buffer Power Reduction Control Y-Decoder Input Buffer Address Latch X-Decoder Address Counter PRELIMINARY SMART 3 ADVANCED BOOT BLOCK DQ - Input Buffer Identifier Register Status Register ...
Page 40
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE MEMORY MAP DIAGRAMS 8-Mbit, 16-Mbit, and 32-Mbit Word-Wide Memory Addressing Top Boot Size 8M 16M (KW) 4 7F000-7FFFF FF000-FFFFF 1FF000-1FFFFF 4 7E000-7EFFF FE000-FEFFF 1FE000-1FEFFF 4 7D000-7DFFF FD000-FDFFF 1FD000-1FDFFF 4 7C000-7CFFF FC000-FCFFF 1FC000-1FCFFF 4 7B000-7BFFF ...
Page 41
Word-Wide Memory Addressing (Continued) Top Boot Size 8M 16M (KW) 32 0F8000-0FFFFF 32 0F0000-0F7FFF 32 0E8000-0EFFFF 32 0E0000-0E7FFF 32 0D8000-0DFFFF 32 0D0000-0D7FFF 32 0C8000-0CFFFF 32 0C0000-0C7FFF 32 0B8000-0BFFFF 32 0B0000-0B7FFF 32 0A8000-0AFFFF 32 0A0000-0A7FFF 32 098000-09FFFF ...
Page 42
SMART 3 ADVANCED BOOT BLOCK 4-Mbit Word-Wide Memory Addressing Top Boot Size (KW 30000-037FFF 10000-017FFF Bottom Boot 4M Size (KW) 3F000-3FFFF 32 3E000-3EFFF 32 ...
Page 43
APPENDIX E BYTE-WIDE MEMORY MAP DIAGRAMS Byte-Wide Memory Addressing Top Boot Size 8M 16M (KB) 8 FE000-FFFFF 1FE000-1FFFFF 3FE000-3FFFFF 8 FC000-FDFFF 1FC000-1FDFFF 3FC000-3FDFFF 8 FA000-FBFFF 1FA000-1FBFFF 3FA000-3FBFFF 8 F8000-F9FFF 1F8000-1F9FFF 3F8000-3F9FFF 8 F6000-F7FFF 1F6000-1F7FFF 3F6000-3F7FFF 8 F4000-F5FFF 1F4000-1F5FFF 3F4000-3F5FFF 8 ...
Page 44
SMART 3 ADVANCED BOOT BLOCK Byte-Wide Memory Addressing (Continued) Top Boot Size 8M 16M (KB) 64 1F0000-1FFFFF 64 1E0000-1EFFFF 64 1D0000-1DFFFF 64 1C0000-1CFFFF 64 1B0000-1BFFFF 64 1A0000-1AFFFF 64 190000-19FFFF 64 180000-18FFFF 64 170000-17FFFF 64 160000-16FFFF 64 150000-15FFFF 64 140000-14FFFF 64 ...
Page 45
APPENDIX F PROGRAM AND ERASE FLOWCHARTS Start Write 40H Program Address/Data Read Status Register No SR Yes Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...
Page 46
SMART 3 ADVANCED BOOT BLOCK Start Write B0H Write 70H Read Status Register 0 SR SR.2 = Program Completed 1 Write FFH Read Array Data No Done Reading Yes Write D0H Write FFH Program Resumed Read Array ...
Page 47
Start Write 20H Write D0H and Block Address Read Status Register Suspend Erase Loop No 0 Yes SR.7 = Suspend Erase 1 Full Status Check if Desired Block Erase Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) ...
Page 48
SMART 3 ADVANCED BOOT BLOCK Start Write B0H Write 70H Read Status Register 0 SR SR.6 = Erase Completed 1 Write FFH Read Array Data No Done Reading Yes Write D0H Write FFH Erase Resumed Read Array ...
Page 49
WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com ...