CM100DU-24F_09 MITSUBISHI, CM100DU-24F_09 Datasheet - Page 2

• Manufacturer Part Number: CM100DU-24F_09
• Manufacturer: MITSUBISHI

MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. I
*
*
*
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
3 : If you use this value, R
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
j
stg
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 1)
th(j-c)
th(j-c)
th(c-f)
th(j-c’)
G
G
rr (Note 1)
(Note 1)
—
—
(Note 1)
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
Q
R
Q
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
Parameter
Parameter
th(f-a)
(Tj = 25°C, unless otherwise specified)
should be measured just under the chips.
j
) should not increase beyond 150°C.
*1
(Tj = 25°C, unless otherwise specified)
G-E Short
C-E Short
T
Pulse
T
Pulse
T
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
I
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied
Case temperature measured point is just under the chips
C
C
E
E
C
C
C
CE
CE
GE
CC
CC
GE
G
= 100A, V
= 10mA, V
= 100A, V
= 100A
GE
= 25°C
= 25°C
= 25°C
= 3.1Ω, Inductive load
= V
= 10V
= 0V
= 600V, I
= 600V, I
= ±15V
= V
CES
GES
, V
GE
GE
CE
, V
C
C
GE
= 100A, V
= 100A
= 0V
= 15V
CE
= 10V
= 0V
= 0V
Test conditions
Conditions
2
GE
= 15V
j
) does not exceed T
*2
(1/2 module)
T
T
j
j
= 25°C
= 125°C
(Note 2)
(Note 2)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min.
3.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
rating.
CM100DU-24F
–40 ~ +150
–40 ~ +125
2.5 ~ 3.5
3.5 ~ 4.5
Ratings
Limits
1200
2500
1100
0.07
Typ.
±20
100
200
100
200
500
310
1.8
1.9
4.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.18
Max.
0.25
0.35
100
400
300
150
2.4
1.7
1.0
3.2
20
39
50
31
—
—
—
—
1
7
*3
Feb. 2009
N • m
N • m
Vrms
K/W
K/W
K/W
K/W
Unit
Unit
mA
nC
µC
µA
nF
nF
nF
°C
°C
ns
ns
ns
ns
ns
W
V
Ω
V
V
A
A
A
A
V
V
g