QM50TX-HB MITSUBISHI, QM50TX-HB Datasheet - Page 3

• Manufacturer Part Number: QM50TX-HB
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

PERFORMANCE CURVES
10
10
100
10
80
60
40
20
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
10
0
COLLECTOR-EMITTER VOLTAGE V
2.2
0
COLLECTOR-EMITTER SATURATION
–3
T
BASE-EMITTER VOLTAGE V
j
V
T
2
=25°C
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
j
CHARACTERISTIC (TYPICAL)
CE
=25°C
COMMON EMITTER INPUT
3
=2.5V
2.6
1
BASE CURRENT I
5
VOLTAGE (TYPICAL)
7
10
I
C
=10A
3.0
–2
2
2
3
I
5
B
3.4
3
I
=150mA
7
C
=25A
10
B
I
I
I
–1
B
B
B
(A)
=50mA
=20mA
=10mA
T
T
I
2
3.8
C
I
j
j
B
4
=25°C
=125°C
=50A
BE
3
=100mA
(V)
5
CE
7
4.2
(V)
5
10
0
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
1
4
3
2
10
0
10
1
0
10
0
0
SWITCHING TIME VS. COLLECTOR
0
I
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
B
=67mA
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
2 3 4 5 7
t
2 3 4 5 7
2 3 4 5 7
MEDIUM POWER SWITCHING USE
on
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
T
T
t
T
T
j
j
s
=25°C
=125°C
j
j
=25°C
=125°C
CURRENT (TYPICAL)
j
j
=125°C
=25°C
V
V
CE(sat)
BE(sat)
10
10
10
1
1
t
1
V
f
CE
=2.5V
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
I
V
I
QM50TX-HB
B1
B2
CC
=100mA
=–1.0A
=300V
V
CE
C
C
C
INSULATED TYPE
=5.0V
(A)
(A)
(A)
10
10
10
2
2
2
Feb.1999