BSM50GD120DN2E3226 Siemens Semiconductor Group, BSM50GD120DN2E3226 Datasheet - Page 3

• Manufacturer Part Number: BSM50GD120DN2E3226
• Description: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
d i
Reverse recovery charge
I
d i
T
T
F
F
F
F
j
j
CC
CC
CC
CC
Gon
Gon
Goff
Goff
F
F
= 50 A, V
= 50 A, V
= 50 A, V
= 50 A, V
= 25 °C
= 125 °C
/ dt = -800 A/µs, T
/ dt = -800 A/µs
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 22
= 22
= 22
= 22
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 0 V
= 0 V
= 50 A
= 50 A
= 50 A
= 50 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
BSM 50 GD120DN2E3226
Values
typ.
44
56
380
70
2.3
1.8
0.2
2.8
8
max.
-
-
-
-
100
100
500
100
2.8
Jan-10-1997
Unit
ns
V
µs
µC