BSM50GD120DN2E3226 Siemens Semiconductor Group, BSM50GD120DN2E3226 Datasheet - Page 6

• Manufacturer Part Number: BSM50GD120DN2E3226
• Description: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
40
)
GE
)
,
= 15 V
80
400
T
= 50 A
j
= 150°C
120 160 200 240 280
600
800 1000 1200
600 V
Q
800 V
V
V
Gate
CE
1600
340
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
)
) , T
200
5
GE
GE
BSM 50 GD120DN2E3226
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800
SC
20
1000 1200
25
10 µs, L < 50 nH
30
Jan-10-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40