CM75RL-12NF_09 MITSUBISHI, CM75RL-12NF_09 Datasheet - Page 5

• Manufacturer Part Number: CM75RL-12NF_09
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
0
10
0
0
0
Conditions:
V
V
R
T
Inductive load
C snubber at bus
Conditions:
V
V
R
T
Inductive load
C snubber at bus
Conditions:
V
V
R
T
Inductive load
j
CC
GE
G
j
j
CC
GE
CC
GE
G
G
= 125°C
COLLECTOR CURRENT I
= 25°C
= 125°C
= 8.3Ω
2
2
= 8.3Ω
2
= 8.3Ω
EMITTER CURRENT I
EMITTER CURRENT I
= 300V
= ±15V
COLLECTOR CURRENT
= 300V
= ±15V
OF FREE-WHEEL DIODE
= 300V
= ±15V
RECOVERY LOSS vs. I
SWITCHING LOSS vs.
Esw(off)
Esw(on)
3
3
3
Err
5 7
5 7
5 7
(TYPICAL)
(TYPICAL)
(TYPICAL)
t
I
rr
rr
10
10
10
1
1
1
2
2
2
3
3
3
E
E
(A)
E
(A)
C
(A)
5 7
5 7
5 7
10
10
10
2
2
2
5
10
10
10
10
10
10
10
10
10
10
–1
–2
–3
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
0
10
10
–3
IGBT part:
Per unit base =
R
FWDi part:
Per unit base =
R
0
0
Conditions:
V
V
I
T
Inductive load
C snubber at bus
Conditions:
V
V
I
T
Inductive load
C snubber at bus
IMPEDANCE CHARACTERISTICS
th(j–c)
th(j–c)
C
2 3 5 7
E
j
CC
GE
j
CC
GE
= 125°C
= 75A
= 125°C
= 75A
2
GATE RESISTANCE R
2
GATE RESISTANCE R
= 300V
= ±15V
= 300V
= ±15V
= 0.29K/W
= 0.51K/W
(IGBT part & FWDi part)
TRANSIENT THERMAL
SWITCHING LOSS vs.
RECOVERY LOSS vs.
10
GATE RESISTANCE
GATE RESISTANCE
3
3
Esw(off)
Esw(on)
HIGH POWER SWITCHING USE
–2
2 3 5 7
Err
MITSUBISHI IGBT MODULES
5 7
5 7
(TYPICAL)
(TYPICAL)
TIME (s)
10
10
10
10
–1
–5
1
1
CM75RL-12NF
2 3 5 7
2 3 5 7
Single Pulse,
T
Under the chip
2
2
C
= 25°C
10
10
3
3
G
G
0
–4
(Ω)
(Ω)
2 3 5 7
2 3 5 7
5 7
5 7
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
2
2
1
–3
Feb. 2009
–1
–2
–3