CM150DY-12NF_09 MITSUBISHI, CM150DY-12NF_09 Datasheet - Page 2

• Manufacturer Part Number: CM150DY-12NF_09
• Manufacturer: MITSUBISHI

ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
*
*
*
Note 1. I
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
3 : Case temperature (Tc’) measured point is just under the chips.
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
GES
j
stg
CES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 1)
th(j-c)
th(j-c)
th(c-f)
th(j-c’)
G
G
rr (Note 1)
If you use this value, R
—
—
—
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
(Note 1)
(Note 1)
Q
R
E
Q
, V
EC
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
Parameter
Parameter
th(f-a)
(Tj = 25°C, unless otherwise specified)
should be measured just under the chips.
j
) should not increase beyond 150°C.
*1
(Tj = 25°C, unless otherwise specified)
G-E Short
C-E Short
DC, T
Pulse
Pulse
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
I
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
Case temperature measured point is just under the chips
E
E
C
C
C
CE
CE
GE
CC
CC
GE
G
= 150A
= 150A, V
= 15mA, V
= 150A, V
GE
= 25°C
= 4.2Ω, Inductive load
= V
= 10V
= 0V
= 300V, I
= 300V, I
= ±15V
C
= V
’ =97°C
CES
GES
, V
GE
GE
CE
, V
C
C
GE
*3
= 0V
= 150A, V
= 150A
= 15V
CE
= 10V
= 0V
= 0V
Test conditions
Conditions
2
GE
= 15V
j
) does not exceed T
*2
T
T
j
j
(1/2 module)
= 25°C
= 125°C
(Note 2)
(Note 2)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min.
4.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
CM150DY-12NF
rating.
–40 ~ +150
–40 ~ +125
2.5 ~ 3.5
3.5 ~ 4.5
Ratings
Limits
2500
0.07
Typ.
600
±20
150
300
150
300
590
310
600
1.7
1.7
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.16
Max.
0.21
0.47
120
100
300
300
150
7.5
0.5
2.2
2.8
0.9
2.6
23
42
—
—
—
—
1
*3
Feb. 2009
N • m
N • m
Vrms
K/W
K/W
K/W
K/W
Unit
Unit
mA
µA
nC
µC
nF
nF
nF
°C
°C
ns
ns
ns
ns
ns
W
V
Ω
V
V
A
A
A
A
V
V
g