SM16JZ47 TOSHIBA Semiconductor CORPORATION, SM16JZ47 Datasheet - Page 2

• Manufacturer Part Number: SM16JZ47
• Manufacturer: TOSHIBA Semiconductor CORPORATION

ELECTRICAL CHARACTERISTICS
MARKING
Repetitive Peak Off−State Current
Gate Trigger Voltage
Gate Trigger
Current
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off−State Voltage
Critical Rate of Rise of
Off−State Voltage at
Commutation
CHARACTERISTIC
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
* NUMBER
* 1
* 2
* 3
* 4
IV
IV
IV
III
III
III
II
II
II
I
I
I
Toshiba Product Mark
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
SYMBOL
(dv / dt) c
R
dv / dt
I
V
V
th (j−c)
V
DRM
I
GT
I
GT
TM
GD
H
TYPE
(Ta = 25°C)
V
V
R
V
R
I
V
V
Junction to Case, AC
V
Exponential Rise
V
(di / dt) c = − 8.7A / ms
TM
DRM
D
L
D
L
D
D
DRM
DRM
= 20Ω
= 20Ω
= 12V,
= 12V,
= Rated, Tc = 125°C
= 12V, I
2
= 25A
SYMBOL
SM16GZ47, SM16GZ47A
SM16JZ47, SM16JZ47A
SM16GZ47A, SM16JZ47A
= Rated
= Rated, T
= 400V, T
TEST CONDITION
TM
= 1A
j
j
= 125°C
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
= 125°C
MIN
Example
0.2
10
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
4
8A : January 1998
8B : February 1998
8L : December 1998
TYP.
300
200
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
M16GZ47
M16JZ47
MARK
A
2001-07-13
MAX
1.5
1.5
1.5
1.5
2.5
20
―
30
30
30
―
20
20
20
―
―
50
―
―
―
―
V / µs
°C / W
V / µs
UNIT
mA
mA
µA
V
V
V