APT5010JVRU3 Advanced Power Technology, APT5010JVRU3 Datasheet - Page 4

• Manufacturer Part Number: APT5010JVRU3
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: Advanced Power Technology

MAXIMUM RATINGS (UltraFast Recovery Diode)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
T
Symbol
F
I
V
V
F
J
(RMS)
I
FSM
,T
I
V
RWM
(AV)
RRM
C
T
V
RM
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
R
L
STG
F
T
200
100
50
10
20
16
12
.5
.1
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (T
Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Maximum Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
1
V
0
DS
I
D
T C =+25 C
T J =+150 C
SINGLE PULSE
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
OPERATION HERE
D
Q
[Cont.]
100
g
, TOTAL GATE CHARGE (nC)
5
10
200
V DS =250V
300
50 100
V DS =100V
R
= 200V
V DS =400V
400
Diode Specifications Section
500
500
C
10 S
100 S
1mS
10mS
100mS
DC
= 80 C, Duty Cycle = 0.5)
J
= 45 C, 8.3mS)
I
I
I
V
V
F
F
F
R
R
= 30A
= 60A
= 30A, T
= V
= V
R
R
Rated
Rated, T
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
J
= 150 C
30,000
10,000
All Ratings: T
5,000
1,000
500
100
200
100
50
10
J
5
1
= 125 C
.01
V
0
V
DS
SD
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.4
T J =+150 C
.1
C
= 25 C unless otherwise specified.
0.8
MIN
APT5010JVRU3
1
T J =+25 C
-55 to 150
1.2
TYP
600
320
300
1.5
40
30
60
C iss
C oss
C rss
1.6
10
APT5010JVRU3
MAX
250
500
1.8
1.6
2.0
50
Amps
UNIT
Volts
UNIT
Volts
pF
C
A