APT5010JVRU3 Advanced Power Technology, APT5010JVRU3 Datasheet - Page 5

• Manufacturer Part Number: APT5010JVRU3
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: Advanced Power Technology

DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
APT5010JVRU3
Symbol
Symbol
diM/dt
I
I
R
R
RRM1
RRM2
0.005
Q
Q
V
V
W
t
t
t
t
t
0.05
0.01
rr1
rr2
rr3
fr1
fr2
fr1
fr2
2.0
1.0
0.5
0.1
rr1
rr2
JC
JA
T
10
-5
Characteristic
Reverse Recovery Time, I
Reverse Recovery Time
I
Forward Recovery Time
I
Reverse Recovery Current
I
Recovery Charge
I
Forward Recovery Voltage
I
Rate of Fall of Recovery Current
I
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
F
F
F
F
F
F
= 30A, di
= 30A, di
= 30A, di
= 30A, di
= 30A, di
= 30A, di
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.05
0.02
0.01
0.2
0.1
F
F
F
F
F
F
/dt = -240A/ S, V
/dt = 240A/ S, V
/dt = -240A/ S, V
/dt = -240A/ S, V
/dt = 240A/ S, V
/dt = -240A/ S, V
10
SINGLE PULSE
-4
F
= 1.0A, di
R
R
R
R
R
R
= 350V
= 350V
RECTANGULAR PULSE DURATION (SECONDS)
10
= 350V
= 350V
= 350V
= 350V (See Figure 10)
-3
F
/dt = -15A/ S, V
10
-2
R
= 30V, T
T
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
J
= 25 C
10
-1
MIN
MIN
Note:
Peak T J = P DM x Z JC + T C
Duty Factor D =
1.0
1.06
t 1
TYP
TYP
155
155
100
300
400
200
7.5
50
50
80
30
4
5
5
t 2
t 1
/ t
2
MAX
MAX
0.90
65
10
15
20
10
Amps
UNIT
UNIT
Volts
A/ S
gm.
C/W
nS
nC
oz.