QM20TD-HB Mitsumi Electronics, Corp., QM20TD-HB Datasheet

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... Tab#250, t=0.8(Fig. 2) Tab#110, t=0.5(Fig. 1) LABEL MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE • I Collector current .......................... 20A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 250 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 (23 ...

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... CE V =300V, I =20A, I =120mA, I =–400mA Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 200 –40~+150 –40~+125 2500 1 ...

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... BE T =25° =125° =25A C 10 =20A 0 – (A) B MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125°C ...

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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM20TD-HB INSULATED TYPE I =–0. =–3A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25°C ...

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... V =300V =120mA =–400mA =25° =125°C j – FORWARD CURRENT QM20TD-HB INSULATED TYPE (A) F Feb.1999 ...