QM100DY-HK Mitsumi Electronics, Corp., QM100DY-HK Datasheet
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QM100DY-HK
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QM100DY-HK Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM 94 4– 5.5 18 C2E1 80± 0.25 (12) (12) 3–M5 LABEL MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE • I Collector current ........................ 100A C • V Collector-emitter voltage ........... 600V CEX • current gain............................... 75 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 1.3 17 ...
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... CE V =300V, I =100A, I =–I = Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 100 100 620 6 1000 –40~+150 –40~+125 2500 1 ...
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... =150A =100A =70A (A) B MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE –V QM100DY-HK INSULATED TYPE I =–2A B2 –5A 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125° ...
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... V =300V =–I = =25° =125° FORWARD CURRENT QM100DY-HK INSULATED TYPE – (A) F Feb.1999 ...