QM200DY-HBK MITSUBISHI, QM200DY-HBK Datasheet - Page 4

• Manufacturer Part Number: QM200DY-HBK
• Description: 100A - transistor module for medium power switching use, insulated type
• Manufacturer: MITSUBISHI

10
0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
–1
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
1
0
7
5
3
2
7
5
3
2
7
5
3
2
0
10
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
TRANSIENT THERMAL IMPEDANCE
0
0
–3
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2
3
3
3
4
4
4
3 4 5 7
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
1
–2
TIME (s)
t
2
2
s
t
10
3
3
f
4
4
1
5
5
7
7
10
2 3 4 5 7
100µs
10
V
I
I
B1
C
–1
2
CC
=100A
t
T
T
w
2
2
=200mA
j
j
=25°C
=125°C
=300V
=50µs
3
3
B2
4
4
5
5
(A)
CE
7
7
10
(V)
10
10
2
3
0
200
180
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
100
CHARACTERISTICS) (TYPICAL)
20
T
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
j
=125°C
COLLECTOR
DISSIPATION
T
T
0.4
j
j
200
=25°C
=125°C
40
HIGH POWER SWITCHING USE
I
B2
300
=–5.0A
60
0.8
–V
CEO
400
80
QM100DY-HBK
(V)
1.2
500
100 120
SECOND
BREAKDOWN
AREA
I
B2
600
=–2.0A
C
1.6
INSULATED TYPE
( C)
700
140
CE
800
160
2.0
(V)
Feb.1999