FW250 Sanyo Semiconductor Corporation, FW250 Datasheet
FW250
Manufacturer Part Number
FW250
Description
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.FW250.pdf
(4 pages)
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Ordering number : ENN7548
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : W250
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW 10s)
Drain Current (PW 100ms)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
•
Low ON-resistance.
Ultrahigh-speed switcing.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
P T
yfs
I D
I D
I D
Ultrahigh-Speed Switching Applications
duty cycle 1%
duty cycle 1%
PW 10 s, duty cycle 1%
Mounted on a ceramic board(2000mm
Mounted on a ceramic board(2000mm
I D =1mA, V GS =0
V DS =60V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =10V
I D =1.5A, V GS =4V
FW250
Conditions
Package Dimensions
unit : mm
2129
Conditions
0.595
8
1
1.27
2
2
0.8mm)1unit, PW 10s
0.8mm), PW 10s
5.0
0.43
4
5
[FW250]
min
N-Channl Silicon MOSFET
1.2
2.8
91603 TS IM TA-100553
60
Ratings
typ
Ratings
150
110
0.2
4
Continued on next page.
--55 to +150
FW250
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
max
150
3.5
5.5
1.8
2.2
145
215
2.6
60
20
20
10
3
1
No.7548-1/4
Unit
Unit
m
m
W
W
V
V
A
A
A
A
V
V
S
C
C
A
A
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FW250 Summary of contents
Page 1
... V DS =60V GSS 16V (off =10V =1mA yfs V DS =10V = (on =3A =10V R DS (on =1.5A =4V N-Channl Silicon MOSFET FW250 [FW250 Source1 2 : Gate1 3 : Source2 4 0 Gate2 5 Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ...
Page 2
... See specified Test Circuit =30V =10V =3A Qgs V DS =30V =10V =3A Qgd V DS =30V =10V = =3A =30V OUT FW250 S 0.4 0.5 0.6 0.7 IT06041 Ta= IT06043 Ratings min typ ...
Page 3
... Total Gate Charge 2.5 Mounted on a ceramic board(2000mm 2.2 2.0 1.8 1.5 1.0 0 100 Ambient Temperature FW250 =10V IT06045 1000 V DD =30V =10V ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. FW250 PS No.7548-4/4 ...