FW250 Sanyo Semiconductor Corporation, FW250 Datasheet - Page 2

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FW250

Manufacturer Part Number
FW250
Description
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Continued from preceding page.
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
300
280
260
240
220
200
180
160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
0
I D =1.5A
Parameter
2
0.1
P.G
10V
0V
PW=10 s
D.C. 1%
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
4
V IN
0.2
3A
R DS (on) -- V GS
6
I D -- V DS
V IN
0.3
50
G
8
0.4
V DD =30V
Symbol
10
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
D
Qg
t r
t f
0.5
S
I D =3A
R L =10
12
FW250
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =30V, V GS =10V, I D =3A
V DS =30V, V GS =10V, I D =3A
V DS =30V, V GS =10V, I D =3A
I S =3A, V GS =0
Ta=25 C
0.6
14
V OUT
IT06041
IT06043
0.7
16
FW250
Conditions
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
6
5
4
3
2
1
0
0
--60
0
V DS =10V
--40
0.5
--20
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
1.0
0
min
R DS (on) -- Ta
1.5
I D -- V GS
20
Ratings
2.0
40
typ
0.86
300
7.8
2.4
1.7
54
34
23
30
40
8
60
2.5
max
80
3.0
1.2
100
No.7548-2/4
3.5
Unit
120
nC
nC
nC
pF
pF
pF
IT06042
IT06044
ns
ns
ns
ns
V
140
4.0

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