91MT160PBF Vishay Semiconductors, 91MT160PBF Datasheet - Page 7

• Manufacturer Part Number: 91MT160PBF
• Manufacturer: Vishay Semiconductors

Document Number: 94353
Revision: 13-Aug-08
94353_14
1000
900
800
700
600
500
400
94353_16
94353_17
Fig. 14 - Maximum Non-Repetitive Surge Current
1
11.MT..K Series
Per junction
0.001
0.01
0.01
Number of Equal Amplitude Half
0.1
10
0.1
10
1
0.001
1
0.001
Cycle Current Pulses (N)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Steady state value
R
R
R
(DC operation)
At any rated load condition and with
rated V
thJC
thJC
thJC
rated dI/dt: 20 V, 30 Ω;
t
≤ 30 % rated dI/dt: 20 V, 65 Ω
t
r
r
= 0.5 μs, t
= 1 μs, t
= 1.07 K/W
= 0.86 K/W
= 0.70 K/W
V
RRM
GD
10
p
applied following surge.
≥ 6 μs
p
I
GD
0.01
≥ 6 μs
Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series
For technical questions, contact:
(Power Modules), 55 A to 110 A
Three Phase Controlled Bridge
0.01
5.MT...K, 9.MT...K, 11.MT...K Series
J
Fig. 16 - Thermal Impedance Z
= 125 °C
0.1
100
Square Wave Pulse Duration (s)
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
(b)
(a)
9.MT..K Series
0.1
1
94353_15
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thJC
1200
1100
1000
Characteristics
900
800
700
600
500
400
Per junction
Fig. 15 - Maximum Non-Repetitive Surge Current
0.01
Frequency Limited by P
10
11.MT..K Series
Per junction
(4)
(1) P
(2) P
(3) P
(4) P
Vishay High Power Products
GM
GM
GM
GM
(3)
Pulse Train Duration (s)
1
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
= 100 W, t
= 50 W, t
= 20 W, t
= 10 W, t
(2)
5.MT..K Series
100
11.MT..K Series
p
p
p
(1)
p
= 1 ms
= 25 ms
= 5 ms
0.1
G(AV)
= 500 μs
Initial T
No voltage reapplied
Rated V
J
RRM
= 125 °C
1000
10
reapplied
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1.0
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