TM10T3B-M Mitsumi Electronics, Corp., TM10T3B-M Datasheet - Page 3
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TM10T3B-M
Manufacturer Part Number
TM10T3B-M
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.TM10T3B-M.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TM10T3B-M
Manufacturer:
NIEC
Quantity:
1 000
Part Number:
TM10T3B-M
Manufacturer:
MIT
Quantity:
20 000
Part Number:
TM10T3B-M
Quantity:
60
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
Thyristor
Diode
Thyristor
Diode
Thyristor
Diode
Item
Item
Item
10
10
10
MAXIMUM FORWARD CHARACTERISTIC
7
5
3
2
7
5
3
2
3
2
1
0.8
V
I
P
T
RRM
RRM
—
GM
j
=125°C
1.0
FORWARD VOLTAGE (V)
P
V
I
G (AV)
DRM
RSM
—
—
1.2
V
1.4
V
V
V
R (DC)
FGM
—
TM
FM
1.6
V
dv/dt
I
FGM
DRM
—
—
—
1.8
V
V
DSM
—
—
T
GT
j
V
D (DC)
T
V
—
—
stg
GD
200
160
120
80
40
0
1
I
I
T (RMS)
F (RMS)
RATED SURGE (NON-REPETITIVE)
I
—
GT
MITSUBISHI THYRISTOR MODULES
2
MEDIUM POWER GENERAL USE
3
CONDUCTION TIME
(CYCLE AT 60Hz)
R
I
I
T (AV)
F (AV)
th (j-c)
5
CURRENT
7
10
TM10T3B-M,-H
R
I
I
th (c-f)
TSM
FSM
20
30
INSULATED TYPE
50
I
70
2 t
100
Feb.1999
di/dt
—