HAF1002 HITACHI, HAF1002 Datasheet
HAF1002
Related parts for HAF1002
HAF1002 Summary of contents
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... HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation (– ...
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... HAF1002(L), HAF1002(S) Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Typical Operation Characteristics ...
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... V — –1 — 200 rr t — 3.7 os1 t — 1 os2 HAF1002(L), HAF1002(S) Max Unit Test Conditions — –3.5V – –1.2V — –10mA — –100 — 100 – ...
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... HAF1002(L), HAF1002(S) Package Dimensions 10.2 ± 0.3 1.2 ± 0.2 1.27 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 4 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 +0.2 0.86 –0.1 2.54 ± 0.5 S type Hitachi Code LDPAK EIAJ JEDEC Unit: mm — — ...
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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...