DS1251Y-120 Dallas Semiconductor, DS1251Y-120 Datasheet

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DS1251Y-120

Manufacturer Part Number
DS1251Y-120
Description
Manufacturer
Dallas Semiconductor
Datasheet

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Manufacturer
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Part Number:
DS1251Y-120
Manufacturer:
PHILIPS
Quantity:
568
Part Number:
DS1251Y-120
Manufacturer:
DALLAS
Quantity:
20 000
FEATURES
ORDERING INFORMATION
DS1251Y–120
DS1251Y–150
DESCRIPTION
The DS1251Y 4096K NV SRAM with Phantom Clock is
a fully static nonvolatile RAM (organized as 512K words
by 8 bits) with a built–in real time clock. The DS1251Y
has a self–contained lithium energy source and control
circuitry which constantly monitors V
tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent
garbled data in both the memory and real time clock.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor data books.
Real time clock keeps track of hundredths of seconds,
minutes, hours, days, date of the month, months, and
years
512K x 8 NV SRAM directly replaces volatile static
RAM or EEPROM
Embedded lithium energy cell maintains calendar op-
eration and retains RAM data
Watch function is transparent to RAM operation
Month and year determine the number of days in each
month; valid up to 2100
Standard 32–pin JEDEC pinout
Full 10% operating range
Operating temperature range 0 C to 70 C
Accuracy is better than 1 minute/month @ 25 C
Over 10 years of data retention in the absence of
power
Available in 120 ns and 150 ns access time
Copyright 1997 by Dallas Semiconductor Corporation.
120 ns access
150 ns access
CC
for an out–of–
4096K NV SRAM with Phantom Clock
PIN ASSIGNMENT
PIN DESCRIPTION
A
CE
GND
DQ
V
WE
OE
RST
The Phantom Clock provides timekeeping information
including hundredths of seconds, seconds, minutes,
hours, day, date, month, and year information. The date
at the end of the month is automatically adjusted for
months with less than 31 days, including correction for
leap years. The Phantom Clock operates in either
24–hour or 12–hour format with an AM/PM indicator.
0
CC
–A
0
–DQ
18
A18/RST
GND
7
DQ0
DQ1
DQ2
A16
A14
A12
32–PIN ENCAPSULATED PACKAGE
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
– Address Inputs
– Chip Enable
– Ground
– Data In/Data Out
– Power (+5V)
– Write Enable
– Output Enable
– Reset
740 MIL FLUSH
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DS1251Y
CC
032697 1/12
DS1251Y

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DS1251Y-120 Summary of contents

Page 1

... DESCRIPTION The DS1251Y 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors V tolerance condition. When such a condition occurs, the ...

Page 2

... CO OE dress access. RAM WRITE MODE The DS1251Y is in the write mode whenever the WE and CE signals are in the active (low) state after address inputs are stable. The latter occurring falling edge will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge ...

Page 3

... HEX VALUE This pattern is sent to the Phantom DS1251Y 032697 3/12 ...

Page 4

... DS1251Y PHANTOM CLOCK REGISTER DEFINITION Figure 2 REGISTER 12/ AM-PM/12/24 MODE Bit 7 of the hours register is defined as the 12– or 24–hour mode select bit. When high, the 12–hour mode is selected. In the 12–hour mode, bit 5 is the AM/PM bit with logic high being PM. In the 24– ...

Page 5

... IL SYMBOL MIN TYP I –1 –1 –1 2 5.0 CCS1 I 3.0 CCS2 I CC01 SYMBOL MIN TYP I/O DS1251Y ( MAX UNITS NOTES 10%) CC MAX UNITS NOTES + ...

Page 6

... Output High Z from WE Output Active from WE Data Setup Time Data Hold Time from WE AC TEST CONDITIONS Output Load: Input Pulse Levels: Timing Measurement Reference Levels Input: Output: Input Pulse Rise and Fall Times: 032697 6/12 DS1251Y-120 SYMBOL SYMBOL MIN MAX t 120 RC t 120 ACC t ...

Page 7

... 100 CW t 200 RST t PF SYMBOL MIN TYP 300 REC SYMBOL MIN TYP DS1251Y ( 4.5 to 5.5V) CC MAX UNITS NOTES ns 100 ns 100 ...

Page 8

... DS1251Y MEMORY READ CYCLE (NOTE 1) ADDRESSES Ï Ï Ï Ï Ï Ï CE Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï OE Ï Ï Ï Ï Ï Ï Ï D OUT MEMORY WRITE CYCLE 1 (NOTES 2, 6, AND 7) ADDRESS Ï Ï Ï Ï Ï Ï Ï Ï Ï ...

Page 9

... OEW Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì DATA IN STABLE ODO Ì Ì Ì Ì Ì Ì DS1251Y 032697 9/12 ...

Page 10

... DS1251Y WRITE CYCLE TO PHANTOM CLOCK Ì Ì Ì Ì Ì Ì Ì D Ì Ì Ì Ì Ì Ì Ì POWER-DOWN/POWER-UP CONDITION V CC 4.50V 3. LEAKAGE CURRENT I L SUPPLIED FROM LITHIUM CELL 032697 10/ ...

Page 11

... C. Post solder cleaning with water washing techniques is acceptable, provided that ultrasonic vibration is not used. during write cycle, the output buffers remain in a high impedance state. is measured from the latter going low to the WP with the clock oscillator running. CC 032697 11/12 DS1251Y ...

Page 12

... DS1251Y DS1251Y 4096K NV SRAM WITH PHANTOM CLOCK 032697 12/ PKG 32–PIN DIM MIN MAX A IN. 1.720 1.740 MM 43.69 44.20 B IN. 0.720 0.740 MM 18.29 18.80 C IN. 0.395 0.415 MM 10.03 10.54 D IN. 0.090 0.120 MM 2.29 3.05 E IN. 0.017 0.030 MM 0.43 0.76 F IN. 0.120 0.160 MM 3.05 4.06 G IN. 0.090 0.110 MM 2.29 2.79 H IN. ...

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