QM30TB-2H MITSUBISHI, QM30TB-2H Datasheet - Page 4

• Manufacturer Part Number: QM30TB-2H
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
FORWARD BIAS SAFE OPERATING AREA
10
–1
3
2
7
5
4
3
2
7
5
4
3
0
1
0
7
5
3
2
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
10
7
2
1
0
10
10
–1
TRANSIENT THERMAL IMPEDANCE
BASE REVERSE CURRENT –I
T
0
–3
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
t
t
2
2
2 3 45 7
s
=25°C
f
SWITCHING TIME VS. BASE
3
2 3 4 5 7
3
T
T
4
4
j
j
=25°C
=125°C
CURRENT (TYPICAL)
5
5
7
7
10
10
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
4 5
4
4
0
5
5
7
7
10
2 3 4 5 7
10
V
I
I
–1
2
B1
C
CC
=30A
2
2
=0.6A
=600V
3
3
B2
4
4
(A)
5
CE
5
7
7
10
(V)
10
10
1
0
3
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
T
COLLECTOR-EMITTER REVERSE
200
j
20
CHARACTERISTICS) (TYPICAL)
=125°C
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
COLLECTOR
DISSIPATION
0.8
400
40
600
60
1.2
–V
CEO
800
T
T
80 100 120 140
j
j
=25°C
=125°C
(V)
1000
I
1.6
B2
SECOND
BREAKDOWN
AREA
=–1A
QM30TB-2H
1200
C
2.0
INSULATED TYPE
( C)
1400
CE
1600
160
(V)
2.4
Feb.1999