MMBT9012 Unisonic Technologies, MMBT9012 Datasheet

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MMBT9012

Manufacturer Part Number
MMBT9012
Description
Manufacturer
Unisonic Technologies
Datasheet

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0
UTC MMBT9012
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS B
PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC MMBT9013
MARKING
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
UTC
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Base-emitter saturation voltage
12
Base-emitter on voltage
Collector cutoff current
Emitter cutoff current
DC current gain
PARAMETER
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD.
PNP EPITAXIAL SILICON TRANSISTOR
SYMBOL
V
V
V
BV
BV
BV
CE
BE
hFE1
hFE2
BE
I
I
CBO
EBO
CBO
CEO
EBO
(sat)
(sat)
(on)
(Ta=25°C, unless otherwise specified )
SYMBOL
(Ta=25°C, unless otherwise specified)
V
V
V
T
Pc
CBO
CEO
EBO
STG
Ic
T
j
TEST CONDITIONS
Ic=-500mA,I
Ic=-500mA,I
V
V
V
CE
I
CE
CE
Ic=-100µA,I
V
E
V
Ic=-1mA,I
=-100µA, Ic=0
=-1V,Ic=-500mA
CB
=-1V,Ic=-50mA
=-1V,Ic=-10mA
EB
=-25V,I
=-3V,I
1: EMITTER 2: BASE 3: COLLECTOR
B
B
=-50mA
=-50mA
B
C
E
E
=0
=0
=0
=0
-55 ~ +150
RATING
-500
225
150
-40
-20
-5
1
MIN
-0.6
-40
-20
64
40
-5
2
-0.18
-0.95
-0.67
TYP
120
90
3
SOT-23
MAX
UNIT
-100
-100
300
-0.6
-1.2
-0.7
mW
QW-R206-020,A
mA
°C
°C
V
V
V
UNIT
nA
nA
V
V
V
V
V
V
1

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MMBT9012 Summary of contents

Page 1

... UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 MARKING 12 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ...

Page 2

... UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK D RANGE 64-91 78-112 UTC UNISONIC TECHNOLOGIES CO., LTD 96-135 112-166 H I 144-202 190-300 2 QW-R206-020,A ...

Page 3

... UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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