BGD712,112 NXP Semiconductors, BGD712,112 Datasheet

IC AMPLIFIER POWER SOT-115J

BGD712,112

Manufacturer Part Number
BGD712,112
Description
IC AMPLIFIER POWER SOT-115J
Manufacturer
NXP Semiconductors
Type
Power Amplifierr
Datasheet

Specifications of BGD712,112

Operating Frequency
750 MHz
Supply Current
410 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Frequency (max)
750MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Single Supply Voltage (max)
30V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-20C to 100C
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055914112::BGD712::BGD712
Product specification
Supersedes data of 2001 Oct 29
dbook, halfpage
DATA SHEET
BGD712
750 MHz, 18.5 dB gain power
doubler amplifier
DISCRETE SEMICONDUCTORS
M3D252
2001 Nov 02

Related parts for BGD712,112

BGD712,112 Summary of contents

Page 1

DATA SHEET dbook, halfpage BGD712 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 DISCRETE SEMICONDUCTORS M3D252 2001 Nov 02 ...

Page 2

... NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Silicon nitride passivation  Rugged construction  Gold metallization ensures excellent reliability. APPLICATIONS  CATV systems operating in the 40 to 750 MHz frequency range ...

Page 3

... NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier CHARACTERISTICS Bandwidth 40 to 750 MHz SYMBOL PARAMETER G power gain p SL slope straight line FL flatness straight line S input return losses 11 S output return losses 22 S phase response 21 CTB composite triple beat X cross modulation ...

Page 4

... NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier SYMBOL PARAMETER CSO composite second order distortion d second order distortion 2 V output voltage o NF noise figure I total current tot consumption (DC) Notes 1. Slope straight line is defined as gain at 750 MHz  gain at 45 MHz. ...

Page 5

... NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier −50 handbook, halfpage CTB (dB) −60 −70 −80 −90 0 200 400 = 75  channels tilt = 7.3 dB (50 to 550 MHz). ( (3) Typ. o (2) Typ. +3 . (4) Typ. 3 . Fig.2 Composite triple beat as a function of frequency under tilted conditions. ...

Page 6

... NXP Semiconductors 750 MHz, 18.5 dB gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads DIMENSIONS (mm are the original dimensions UNIT b c max. max. max. 0.51 mm 20.8 9 ...

Page 7

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 8

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 9

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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