BGD814,112 NXP Semiconductors, BGD814,112 Datasheet - Page 6

AMP GAIN POWER 860MHZ SOT115J

BGD814,112

Manufacturer Part Number
BGD814,112
Description
AMP GAIN POWER 860MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGD814,112

Operating Frequency
870 MHz
Operating Supply Voltage
24 V
Supply Current
410 mA
Mounting Style
SMD/SMT
Package / Case
SOT-115
Number Of Channels
1
Package
7SOT-115J
Typical Power Gain
21.5(Max)@870MHz dB
Maximum Output Return Loss
13(Min)@914MHz dB
Maximum Input Return Loss
12(Min)@914MHz dB
Frequency (max)
870MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055919112::BGD814::BGD814
NXP Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler
amplifier
Fig.7
Z
(1) V
(2) Typ. +3 .
Fig.5
Z
(1) V
(2) Typ. +3 .
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
−40
−50
−60
−70
−80
−50
−60
−70
−80
−90
o
o
L
L
.
.
0
= 75 ; V
0
= 75 ; V
Composite second order distortion as a
function of frequency under tilted conditions.
Composite triple beat as a function of
frequency under tilted conditions.
200
200
B
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
800
800
f (MHz)
f (MHz)
(1)
(1)
(2)
(3)
(4)
(2)
(3)
(4)
MLD348
MLD350
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
6
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.6
X mod
S
(dB)
= Z
−40
−50
−60
−70
−80
o
L
.
0
= 75 ; V
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
400
600
Product specification
800
f (MHz)
(1)
BGD814
(2)
(3)
(4)
MLD349
1000
(dBmV)
52
48
44
40
36
V o

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