BGD885,112 NXP Semiconductors, BGD885,112 Datasheet - Page 5

AMP GAIN POWER 860MHZ SOT115D

BGD885,112

Manufacturer Part Number
BGD885,112
Description
AMP GAIN POWER 860MHZ SOT115D
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGD885,112

Operating Frequency
860 MHz
Noise Figure
8 dB at 860 MHz
Supply Current
450 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934005490112::BGD885::BGD885
NXP Semiconductors
PACKAGE OUTLINE
2001 Nov 02
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads
860 MHz, 17 dB gain power doubler
amplifier
DIMENSIONS (mm are the original dimensions)
UNIT
mm 20.8
VERSION
OUTLINE
SOT115D
max.
A
A 2
U 1
max.
B
L
9.5
A 2
c
0.51
0.38
b
d
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
c
U 2
E
IEC
max.
D
max.
Q
d
p
max.
E
q
JEDEC
e
y
REFERENCES
M
e 1
A
B
F
F
0
S
min.
L
JEITA
scale
4.15
3.85
5
5
p
max.
2.4 38.1 25.4 10.2 4.2 44.75
W
Q
10 mm
q
Z
1
q 1
e 1
2
3
q 2
e
4
S
q 1
q 2
D
5
44.25
6
U 1
PROJECTION
EUROPEAN
7
8.2
7.8
U 2
b
8
y
9
UNC
6-32
M
W
B
0.25
Product specification
w
w
x
ISSUE DATE
0.7
x
M
04-02-04
10-06-18
BGD885
M
B
0.1
SOT115D
y
max.
3.8
Z

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