LS132 Micross, LS132 Datasheet

LS132

Manufacturer Part Number

LS132

Description

Manufacturer

Micross

Datasheet

1.LS132.pdf (1 pages)

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MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

∆|(V

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Notes:

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.

Available Packages:

LS132 in PDIP

LS132 available as bare die

Please contact Micross for full package and die dimensions:

Email:

Web:

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

The LS132 is a monolithic pair of PNP transistors

mounted in a single PDIP package. The monolithic dual

chip design reduces parasitics and gives better

performance while ensuring extremely tight matching.

The LS132 is a direct replacement for discontinued

Intersil IT132.

The 8 Pin PDIP provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

LS132 Features:

(See Packaging Information).

SYMBOL

BE1

C1C2

(SAT)

EBO

CBO

C1C2

OBO

www.micross.com/distribution.aspx

SYMBOL

CBO

CEO

EBO

CCO

BE1

chipcomponents@micross.com

– V

– I

High h

Tight matching

Tight V

Low Output Capacitance

BE2

Click To Buy

BE2

)| / ∆T

Collector to Collector Leakage Current

Linear Systems replaces discontinued Intersil IT132

at low current

Collector to Collector Capacitance

Emitter‐Base Breakdown Voltage

Current Gain Bandwidth Product

tracking

Collector to Collector Voltage

Collector Saturation Voltage

Collector to Emitter Voltage

Narrow Band Noise Figure

Collector to Base Voltage

CHARACTERISTIC

Base Emitter Voltage Differential

Change with Temperature

Base Current Differential

Collector Cutoff Current

Emitter Cutoff Current

Output Capacitance

CHARACTERISTICS

DC Current Gain

MONOLITHIC DUAL

PNP TRANSISTOR

MIN.

100

110

6.2

‐‐

FEATURES

Direct Replacement for INTERSIL IT132

HIGH h

OUTPUT CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (One side)

Continuous Power Dissipation (Both sides)

Linear Derating factor (One side)

Linear Derating factor (Both sides)

Maximum Currents

Collector Current

LS132

tracking

TYP.

‐‐

@ LOW CURRENT

MIN

‐‐

MAX.

0.5

‐‐

TYP

‐‐

UNITS

MHz

MAX

PDIP (Top View)

= 100µA, V

UNITS

µV/°C

= 0.5mA, I

= 1.0mA, V

= 10µA, V

= 1mA, V

CONDITIONS

= 5V, BW=200Hz, R

= 10µA, I

= 0, V

= 10µA, I

= 0, V

≥ 80 @ 10µA

f = 1KHz

≤ 20µV°C

≤ 2.0pF

= ±60V

= 0V

= ‐55°C to +125°C

= 10µA, V

‐65°C to +200°C

‐55°C to +150°C

= 0.05mA

= 45V

= 3V

= 5V

2.3mW/°C

4.3mW/°C

= 0

= 5V

= 0

= 5V

250mW

500mW

= 5V

10mA

= 5V

= 10KΩ,

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