BTA212B-800B NXP Semiconductors, BTA212B-800B Datasheet - Page 2
![Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur](/photos/41/50/415039/sot404_3d_sml.gif)
BTA212B-800B
Manufacturer Part Number
BTA212B-800B
Description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-600B.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA212B-800B
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1;3 Semiconductors
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope suitable for
surface mounting intended for use in
circuits where high static and dynamic
dV/dt and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature, without the aid
of a snubber.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997
Three quadrant triacs
high commutation
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
mb
DRM
t
GM
GM
G(AV)
stg
j
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
SYMBOL
V
I
I
mb
j
T(RMS)
TSM
G
= 25 ˚C prior to
DRM
/dt = 0.2 A/μs
= 20 A; I
≤ 99 ˚C
1
2
G
voltages
current
3
PARAMETER
Repetitive peak off-state
RMS on-state current
Non-repetitive peak on-state
= 0.2 A;
1
mb
MIN.
-40
-
-
-
-
-
-
-
-
-
-
BTA212B- 500B
-500
500
1
SYMBOL
T2
MAX. MAX. MAX. UNIT
MAX.
-600
600
500
105
100
150
125
0.5
BTA212B series B
12
95
12
95
45
2
5
5
1
Product specification
600B
600
12
95
-800
800
800B
800
12
95
Rev 1.200
UNIT
A/μs
A
G
W
W
˚C
˚C
V
A
A
A
A
V
T1
2
V
A
A
s