BTA225B-800B NXP Semiconductors, BTA225B-800B Datasheet - Page 5
![Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur](/photos/41/50/415039/sot404_3d_sml.gif)
BTA225B-800B
Manufacturer Part Number
BTA225B-800B
Description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
Manufacturer
NXP Semiconductors
Datasheet
1.BTA225B-600B.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA225B-800BT
Manufacturer:
NXP/恩智浦
Quantity:
20 000
September 1997
Three quadrant triacs
high commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
Semiconductors
-50
-50
IGT(25 C)
(T
3
2
1
0
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BTA216
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G-
T2- G-
100
T2+ G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of change of commutating
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
0.001
80
70
60
50
40
30
20
10
current dI
100
0.01
0
10
0.1
10
0
10us
1
IT / A
1
20
Vo = 1.073 V
Rs = 0.015 ohms
Tj = 125 C
dIcom/dt (A/ms)
Zth j-mb (K/W)
Tj = 25 C
0.5
0.1ms
40
com
/dt versus junction temperature.
pulse width t
1ms
1
60
unidirectional
tp / s
BTA140
BTA225
VT / V
BTA140
10ms
Tj / C
1.5
80
typ
BTA225B series B
P
D
p
bidirectional
.
0.1s
100
Product specification
2
t
p
max
120
th j-mb
2.5
1s
t
Rev 1.100
, versus
10s
140
3