BT134-600E NXP Semiconductors, BT134-600E Datasheet
BT134-600E
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BT134-600E Summary of contents
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... BT134 series E Triacs sensitive gate Product specification DISCRETE SEMICONDUCTORS August 1997 ...
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... 0 /dt = 0.2 A/μs G T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT134 series E MAX. MAX. MAX. UNIT BT134- 500E 600E 800E 500 600 800 SYMBOL T2 MIN. MAX. -500 ...
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... 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / A/μ Product specification BT134 series E MIN. TYP. MAX 3 3.7 - 100 - MIN. TYP. MAX. T2 2 4 5 ...
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... Fig.5. Maximum permissible repetitive rms on-state , for p ≤ 20ms TSM time Tj initial = 25 C max 100 1000 3 Product specification BT134 series E IT(RMS BT136 - Tmb / C Fig.4. Maximum permissible rms current I versus mounting base temperature T BT136 IT(RMS ...
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... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT134 series E BT136 Tj = 125 typ max Vo = 1.27 V 0 BT136 Zth j-mb (K/W) unidirectional bidirectional 0.1ms 1ms 10ms ...
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... Net Mass: 0.8 g mounting base 4.58 1) Lead dimensions within this zone uncontrolled. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1997 2.8 2.3 1) 2.54 max 0.5 Fig.13. SOT82; pin 2 connected to mounting base. 5 Product specification BT134 series E 7.8 max 3.1 2.5 1 2.29 0.88 max 3.75 11.1 max 15.3 min Rev 1.200 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www ...