BT134-600E NXP Semiconductors, BT134-600E Datasheet - Page 4

• Manufacturer Part Number: BT134-600E
• Description: Planar passivated sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
August 1997
Triacs
sensitive gate
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
8
7
6
5
4
3
2
1
0
on-state current I
1000
30
25
20
15
10
0
Ptot / W
100
5
0
10
1
ITSM / A
10us
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
1
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
T
TSM
Number of cycles at 50Hz
10
TSM
2
, versus number of cycles, for
IT(RMS) / A
, where α = conduction angle.
, versus pulse width t
BT136
BT136
BT136
1ms
T / s
3
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
100
≤ 20ms.
T
T
10ms
Tmb(max) / C
4
120
90
60
30
tot
I TSM
I TSM
= 180
, versus rms
time
time
100ms
p
, for
1000
5
101
104
107
110
113
116
119
122
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
Fig.4. Maximum permissible rms current I
5
4
3
2
1
0
-50
GT
1.6
1.4
1.2
0.8
0.6
0.4
IT(RMS) / A
12
10
(T
8
6
4
2
0
0.01
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT136
Tmb / C
BT136
BT136
Tj / C
50
50
mb
Product specification
BT134 series E
1
≤ 107˚C.
100
100
107 C
mb
Rev 1.200
T(RMS)
.
150
10
150
,
j
.