BT134W-600 NXP Semiconductors, BT134W-600 Datasheet - Page 2
![Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance](/photos/41/50/415035/sot223_3d_sml.gif)
BT134W-600
Manufacturer Part Number
BT134W-600
Description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT134W-600.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT134W-600135
Manufacturer:
NXP Semiconductors
Quantity:
60 088
Part Number:
BT134W-600D
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BT134W-600D115
Manufacturer:
NXP Semiconductors
Quantity:
60 711
Company:
Part Number:
BT134W-600E
Manufacturer:
PHI
Quantity:
1 000
Part Number:
BT134W-600E
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
1;3 Semiconductors
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope
mounting,
applications
bidirectional transient and blocking
voltage capability and high thermal
cycling
applications include motor control,
industrial and domestic
heating and static switching.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
September 1997
Triacs
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
DRM
t
GM
GM
G(AV)
stg
j
tab
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
performance.
suitable
intended
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
requiring
for
for
use
lighting,
surface
Typical
high
in
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
T(RMS)
TSM
G
DRM
/dt = 0.2 A/μs
= 1.5 A; I
G
1
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
= 0.2 A;
1
sp
j
= 25 ˚C prior to
≤ 108 ˚C
2
4
T2+ G+
T2+ G-
T2- G-
T2- G+
3
BT134W-
BT134W-
BT134W-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-500
500
MAX. MAX. MAX. UNIT
500G 600G 800G
500F
500
500
10
1
1
MAX.
Product specification
BT134W series
-600
600
150
125
0.5
0.5
10
11
50
50
50
10
600F
1
2
5
5
600
600
10
1
1
-800
800
800F
800
800
10
1
Rev 1.200
UNIT
G
A/μs
A/μs
A/μs
A/μs
T1
A
W
W
˚C
˚C
V
A
A
A
A
V
2
V
A
A
s