BT136-600D NXP Semiconductors, BT136-600D Datasheet - Page 6

• Manufacturer Part Number: BT136-600D
• Description: Planar passivated very sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BT136-600D
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
GT
L
H
D
gt
T
GT
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
gate-controlled turn-on
time
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
see
V
V
exponential waveform; gate open circuit
I
dI
All information provided in this document is subject to legal disclaimers.
T
TM
j
j
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
D
D
DM
G
= 5 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 6 A; V
Figure 11
Figure 11
= 402 V; T
Rev. 03 — 1 April 2011
j
= 25 °C; see
T
T
T
T
G
G
G
G
T
D
j
T
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
= 0.1 A; T
= 25 °C; see
= 600 V; I
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
j
= 0.1 A; T
= 125 °C
j
Figure 7
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 8
= 125 °C; R
j
G
= 25 °C;
Figure 10
j
= 0.1 A;
= 125 °C;
Figure 9
GT1
= 1 kΩ;
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
BT136-600D
Typ
2
2.5
2.5
5
1.6
4.5
1.2
2.2
1.2
1.4
0.7
0.4
0.1
5
2
© NXP B.V. 2011. All rights reserved.
Max
5
5
5
10
10
15
10
15
10
1.7
1.5
-
0.5
-
-
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
µs
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