BTA140-800 NXP Semiconductors, BTA140-800 Datasheet - Page 4

Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance

BTA140-800

Manufacturer Part Number
BTA140-800
Description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
May 2003
Triacs
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
40
30
20
10
200
150
100
1000
on-state current I
0
50
100
0
0
10
Ptot / W
10us
1
ITSM / A
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
5
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
T
10
TSM
Number of cycles at 50Hz
10
TSM
, versus number of cycles, for
IT(RMS) / A
, where α = conduction angle.
, versus pulse width t
15
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
20
100
≤ 20ms.
10ms
T
T
Tmb(max) / C
tot
25
, versus rms
120
I TSM
90
60
30
I TSM
time
= 180
time
p
100ms
, for
30
1000
85
95
105
115
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
30
25
20
15
10
Fig.4. Maximum permissible rms current I
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
50
40
30
20
10
IT(RMS) / A
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BTA140
Tj / C
Tmb / C
50
50
mb
Product specification
BTA140 series
1
91 C
≤ 91˚C.
100
100
mb
Rev 1.500
T(RMS)
.
150
10
150
,
j
.

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