Z0109NA0 NXP Semiconductors, Z0109NA0 Datasheet - Page 3

• Manufacturer Part Number: Z0109NA0
• Description: Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring enhanced noise immunity and direct interfacing to logic ICs and low power gate drivers
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Z0109NA0
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS )
(A)
1.2
0.8
0.4
0
-50
temperature; maximum values
RMS on-state current as a function of lead
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aac264
lead
(°C)
150
full sine wave; T
Conditions
see
full sine wave; T
see
full sine wave; T
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
T
T
T
T
Rev. 3 — 12 May 2011
= 10 ms; sine-wave pulse
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; I
Figure
Figure
G
G
G
G
3; see
4; see
= 20 mA; dI
= 20 mA; dI
= 20 mA; dI
= 20 mA; dI
Fig 2.
I
lead
j(init)
j(init)
T(RMS)
(A)
Figure 2
Figure 5
≤ 45 °C; see
16
12
= 25 °C; t
= 25 °C; t
8
4
0
10
duration; maximum values
RMS on-state current as a function of surge
G
G
G
G
-2
/dt = 100 mA/µs;
/dt = 100 mA/µs;
/dt = 100 mA/µs;
/dt = 100 mA/µs;
p
p
= 20 ms;
= 16.7 ms
Figure
10
-1
1;
1
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Z0109NA0
surge duration (s)
© NXP B.V. 2011. All rights reserved.
003a a f977
800
150
125
Max
1
12.5
13.8
0.78
50
50
50
20
1
2
0.1
10
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
3 of 15
2
s