Z0109NN0 NXP Semiconductors, Z0109NN0 Datasheet - Page 3

• Manufacturer Part Number: Z0109NN0
• Description: Planar passivated sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package intended for applications requiring enhanced immunity to noise and direct interfacing to logic level ICs and low power gate drivers
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Z0109NN0
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
1.2
0.8
0.4
0
-50
point temperature; maximum values
RMS on-state current as a function of solder
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
003a a c270
T
s p
(°C)
150
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
Rev. 3 — 10 May 2011
p
T
T
T
T
= 10 ms; sine-wave pulse
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; I
Figure
Figure
G
G
G
G
1; see
4; see
= 20 mA; dI
= 20 mA; dI
= 20 mA; dI
= 20 mA; dI
Fig 2.
I
T(RMS)
sp
j(init)
j(init)
(A)
Figure 2
Figure 5
≤ 105 °C; see
8
6
4
2
0
10
= 25 °C; t
= 25 °C; t
duration; maximum values
RMS on-state current as a function of surge
-2
G
G
G
G
/dt = 100 mA/µs;
/dt = 100 mA/µs;
/dt = 100 mA/µs;
/dt = 100 mA/µs;
p
p
= 20 ms;
= 16.7 ms
Figure
10
-1
3;
1
surge duration (s)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Z0109NN0
© NXP B.V. 2011. All rights reserved.
003aac269
150
Max
800
1
12.5
13.8
0.78
50
50
50
20
1
2
0.1
125
10
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
3 of 17
2
s